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Nano Letters|March 31, 2009
Scanning photocurrent microscopy analysis of Si nanowire field-effect transistors fabricated by surface etching of the channelJonathan E Allen, Eric R Hemesath, Lincoln J LauhonNano Letters|June 17, 2009
Ordered stacking fault arrays in silicon nanowiresFrancisco J Lopez, Eric R Hemesath, Lincoln J LauhonNano Letters|August 14, 2008
Syntaxial growth of Ge/Mn-germanide nanowire heterostructuresJessica L Lensch-Falk, Eric R Hemesath, Lincoln J LauhonNano Letters|January 5, 2012
Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopyWei Cai, Yulu Che, Jonathan P Pelz, et al.Small (Weinheim an Der Bergstrasse, Germany)|March 27, 2012
Atomic structural analysis of nanowire defects and polytypes enabled through cross-sectional lattice imagingEric R Hemesath, Daniel K Schreiber, Christian F Kisielowski, et al.Nano Letters|August 8, 2009
Relative influence of surface states and bulk impurities on the electrical properties of Ge nanowiresShixiong Zhang, Eric R Hemesath, Daniel E Perea, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|November 14, 2012
A method for directly correlating site-specific cross-sectional and plan-view transmission electron microscopy of individual nanostructuresDaniel K Schreiber, Praneet Adusumilli, Eric R Hemesath, et al.Nature Nanotechnology|May 8, 2009
Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowireDaniel E Perea, Eric R Hemesath, Edwin J Schwalbach, et al.Nano Letters|November 25, 2011
Catalyst incorporation at defects during nanowire growthEric R Hemesath, Daniel K Schreiber, Emine B Gulsoy, et al.Nature Nanotechnology|July 26, 2008
High-resolution detection of Au catalyst atoms in Si nanowiresJonathan E Allen, Eric R Hemesath, Daniel E Perea, et al.Pageof 1