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Journal of Obstetrics and Gynaecology : the Journal of the Institute of Obstetrics and Gynaecology|January 21, 2016
How education changes clinical documentation in early pregnancyFida Ali, Mary F HigginsACS Applied Materials & Interfaces|December 7, 2022
Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe<sub>2</sub> Semiconductor DevicesZhenping Wang, Nasir Ali, Fida Ali, et al.Reviews on Environmental Health|July 14, 2026
Dietary patterns, gut microbiota, and gastrointestinal disorders: mechanistic insights into irritable bowel syndrome and inflammatory bowel diseaseYasmen Khial, Shalima Lathief, Lama Aliwi, et al.ACS Applied Materials & Interfaces|March 1, 2023
Percolation-Based Metal-Insulator Transition in Black Phosphorus Field Effect TransistorsNasir Ali, Myeongjin Lee, Fida Ali, et al.ACS Applied Materials & Interfaces|February 29, 2020
Phase-Engineered Molybdenum Telluride/Black Phosphorus Van der Waals Heterojunctions for Tunable Multivalued LogicYasir Hassan, Pawan Kumar Srivastava, Budhi Singh, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 5, 2023
Modulation of Contact Resistance of Dual-Gated MoS<sub>2</sub> FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal ContactsTien Dat Ngo, Tuyen Huynh, Hanggyo Jung, et al.ACS Applied Materials & Interfaces|April 30, 2020
Gate-Modulated Ultrasensitive Visible and Near-Infrared Photodetection of Oxygen Plasma-Treated WSe<sub>2</sub> Lateral pn-HomojunctionsSekhar Babu Mitta, Fida Ali, Zheng Yang, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 8, 2023
Strain Engineering for Enhancing Carrier Mobility in MoTe<sub>2</sub> Field-Effect TransistorsAbde Mayeen Shafi, Md Gius Uddin, Xiaoqi Cui, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 19, 2022
Selective Electron Beam Patterning of Oxygen-Doped WSe<sub>2</sub> for Seamless Lateral Junction TransistorsTien Dat Ngo, Min Sup Choi, Myeongjin Lee, et al.Nano Letters|December 15, 2025
Enhanced 2D MoTe<sub>2</sub> Analogue Switching through Laser Processing and ALD-Passivation for Dual-Function Neuromorphic DevicesMohamed Radwan, Seyed Hossein Hosseini-Shokouh, Abde Mayeen Shafi, et al.Pageof 2