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Sensors (Basel, Switzerland)
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March 28, 2026
Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection
Enrico Sangregorio, Alfio Samuele Mancuso, Saverio De Luca, et al.
Materials (Basel, Switzerland)
|
August 27, 2021
Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)
Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, et al.
Journal of Synchrotron Radiation
|
June 18, 2026
SiC resistive X-ray beam monitor for intensity and position control of synchrotron light
Gabriele Trovato, Niccolò La Rosa, Francesco La Via, et al.
Micromachines
|
February 3, 2021
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface
Mohammad Beygi, William Dominguez-Viqueira, Chenyin Feng, et al.
Micromachines
|
July 27, 2022
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications
Alessandro Meli, Annamaria Muoio, Riccardo Reitano, et al.
Micromachines
|
June 28, 2023
Emerging SiC Applications beyond Power Electronic Devices
Francesco La Via, Daniel Alquier, Filippo Giannazzo, et al.
Materials (Basel, Switzerland)
|
October 18, 2019
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
Cristiano Calabretta, Marta Agati, Massimo Zimbone, et al.
Crystal Growth & Design
|
August 9, 2022
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC
Cristiano Calabretta, Viviana Scuderi, Corrado Bongiorno, et al.
Micromachines
|
July 3, 2019
Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide
Mohammad Beygi, John T Bentley, Christopher L Frewin, et al.
Scientific Reports
|
August 10, 2019
Biocompatibility between Silicon or Silicon Carbide surface and Neural Stem Cells
Gabriele Bonaventura, Rosario Iemmolo, Valentina La Cognata, et al.
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Search research articles
Search
Showing results (11-20 of 32) with videos related to
Sort By:
Page
of 4
Sensors (Basel, Switzerland)
|
March 28, 2026
Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection
Enrico Sangregorio, Alfio Samuele Mancuso, Saverio De Luca, et al.
Materials (Basel, Switzerland)
|
August 27, 2021
Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)
Cristiano Calabretta, Viviana Scuderi, Ruggero Anzalone, et al.
Journal of Synchrotron Radiation
|
June 18, 2026
SiC resistive X-ray beam monitor for intensity and position control of synchrotron light
Gabriele Trovato, Niccolò La Rosa, Francesco La Via, et al.
Micromachines
|
February 3, 2021
Silicon Carbide and MRI: Towards Developing a MRI Safe Neural Interface
Mohammad Beygi, William Dominguez-Viqueira, Chenyin Feng, et al.
Micromachines
|
July 27, 2022
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications
Alessandro Meli, Annamaria Muoio, Riccardo Reitano, et al.
Micromachines
|
June 28, 2023
Emerging SiC Applications beyond Power Electronic Devices
Francesco La Via, Daniel Alquier, Filippo Giannazzo, et al.
Materials (Basel, Switzerland)
|
October 18, 2019
Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
Cristiano Calabretta, Marta Agati, Massimo Zimbone, et al.
Crystal Growth & Design
|
August 9, 2022
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC
Cristiano Calabretta, Viviana Scuderi, Corrado Bongiorno, et al.
Micromachines
|
July 3, 2019
Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide
Mohammad Beygi, John T Bentley, Christopher L Frewin, et al.
Scientific Reports
|
August 10, 2019
Biocompatibility between Silicon or Silicon Carbide surface and Neural Stem Cells
Gabriele Bonaventura, Rosario Iemmolo, Valentina La Cognata, et al.
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of 4