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Francesco La Via

Showing results (21-30 of 32) with videos related to

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Materials (Basel, Switzerland)|October 23, 2019
3C-SiC Growth on Inverted Silicon Pyramids Patterned SubstrateMassimo Zimbone, Marcin Zielinski, Corrado Bongiorno, et al.
Materials (Basel, Switzerland)|October 5, 2019
Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field ApproachMarco Masullo, Roberto Bergamaschini, Marco Albani, et al.
Materials (Basel, Switzerland)|August 26, 2023
Al<sub>2</sub>O<sub>3</sub> Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS DevicesEmanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, et al.
Sensors (Basel, Switzerland)|July 29, 2023
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide DetectorsCarmen Altana, Lucia Calcagno, Caterina Ciampi, et al.
Materials (Basel, Switzerland)|February 27, 2026
High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature OperationAlfio Samuele Mancuso, Saverio De Luca, Enrico Sangregorio, et al.
Materials (Basel, Switzerland)|June 13, 2025
Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction DetectorAlfio Samuele Mancuso, Enrico Sangregorio, Annamaria Muoio, et al.
Materials (Basel, Switzerland)|October 13, 2021
Status and Prospects of Cubic Silicon Carbide Power Electronics Device TechnologyFan Li, Fabrizio Roccaforte, Giuseppe Greco, et al.
Journal of Synchrotron Radiation|December 6, 2024
SiC free-standing membrane for X-ray intensity monitoring in synchrotron radiation beamlinesGabriele Trovato, Marzio De Napoli, Christian Gollwitzer, et al.
Materials (Basel, Switzerland)|February 3, 2021
Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide DetectorsMatteo Hakeem Kushoro, Marica Rebai, Marco Tardocchi, et al.
Biomedical Engineering Online|June 7, 2014
Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodesMassimo Camarda, Giuseppe Fisicaro, Ruggero Anzalone, et al.
Pageof 4

Showing results (21-30 of 32) with videos related to

Sort By:
Pageof 4
Materials (Basel, Switzerland)|October 23, 2019
3C-SiC Growth on Inverted Silicon Pyramids Patterned SubstrateMassimo Zimbone, Marcin Zielinski, Corrado Bongiorno, et al.
Materials (Basel, Switzerland)|October 5, 2019
Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field ApproachMarco Masullo, Roberto Bergamaschini, Marco Albani, et al.
Materials (Basel, Switzerland)|August 26, 2023
Al<sub>2</sub>O<sub>3</sub> Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS DevicesEmanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, et al.
Sensors (Basel, Switzerland)|July 29, 2023
Radiation Damage by Heavy Ions in Silicon and Silicon Carbide DetectorsCarmen Altana, Lucia Calcagno, Caterina Ciampi, et al.
Materials (Basel, Switzerland)|February 27, 2026
High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature OperationAlfio Samuele Mancuso, Saverio De Luca, Enrico Sangregorio, et al.
Materials (Basel, Switzerland)|June 13, 2025
Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction DetectorAlfio Samuele Mancuso, Enrico Sangregorio, Annamaria Muoio, et al.
Materials (Basel, Switzerland)|October 13, 2021
Status and Prospects of Cubic Silicon Carbide Power Electronics Device TechnologyFan Li, Fabrizio Roccaforte, Giuseppe Greco, et al.
Journal of Synchrotron Radiation|December 6, 2024
SiC free-standing membrane for X-ray intensity monitoring in synchrotron radiation beamlinesGabriele Trovato, Marzio De Napoli, Christian Gollwitzer, et al.
Materials (Basel, Switzerland)|February 3, 2021
Detector Response to D-D Neutrons and Stability Measurements with 4H Silicon Carbide DetectorsMatteo Hakeem Kushoro, Marica Rebai, Marco Tardocchi, et al.
Biomedical Engineering Online|June 7, 2014
Theoretical and experimental study of the role of cell-cell dipole interaction in dielectrophoretic devices: application to polynomial electrodesMassimo Camarda, Giuseppe Fisicaro, Ruggero Anzalone, et al.
Pageof 4