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3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate.

Massimo Zimbone1, Marcin Zielinski2, Corrado Bongiorno3

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|October 23, 2019
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Summary

Epitaxial growth of cubic silicon carbide (3C-SiC) on patterned silicon pyramids minimizes defects. Controlling inverted pyramid size and growth parameters improves 3C-SiC epilayer quality by managing voids and anti-phase boundaries.

Keywords:
3C-SiCISPSEMSTEManti-phase boundarycompliant substrategrowth rateheteroepitaxymicro Ramanstacking faults

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Crystal Growth

Background:

  • Epitaxial growth of cubic silicon carbide (3C-SiC) on silicon is challenging due to defects at the interface.
  • Compliant substrates are explored to mitigate stacking faults in SiC/Si heterostructures.

Purpose of the Study:

  • Investigate the impact of patterned silicon substrates with inverted pyramids on 3C-SiC epilayer quality.
  • Analyze the formation and behavior of defects like anti-phase boundaries (APBs) and voids.
  • Determine the influence of inverted pyramid size on defect density and epilayer properties.

Main Methods:

  • Epitaxial growth of 3C-SiC on patterned silicon substrates with squared inverted pyramids (ISP).
  • Surface morphology and defect analysis using microscopy and diffraction techniques.
  • Investigation of heterointerface structure and polarity.

Main Results:

  • Compliant ISP substrates effectively prevent stacking faults from reaching the 3C-SiC surface.
  • Anti-phase boundaries (APBs) form at the junctions of adjacent pyramid faces.
  • Buried voids emerge at the pyramid vertex due to APB formation.
  • The size of the inverted pyramid influences APB density and void characteristics.

Conclusions:

  • Patterned silicon substrates with ISPs offer a viable route for high-quality 3C-SiC epitaxy.
  • Controlled manipulation of growth parameters can mitigate void formation and reduce APB density.
  • Optimizing ISP geometry and growth conditions leads to improved 3C-SiC epilayer quality.