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Fujun Xu

Showing results (31-40 of 46) with videos related to

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Nano Letters|April 26, 2013
Tunable surface electron spin splitting with electric double-layer transistors based on InNChunming Yin, Hongtao Yuan, Xinqiang Wang, et al.
Physical Review Letters|February 21, 2025
Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric JogsHan Yang, Xiangru Han, Xuelin Yang, et al.
Scientific Reports|March 11, 2016
Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al compositionJianpeng Cheng, Xuelin Yang, Ling Sang, et al.
Sensors (Basel, Switzerland)|July 1, 2018
Enhanced Hydrogen Detection Based on Mg-Doped InN EpilayerShibo Wang, Xinqiang Wang, Zhaoying Chen, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 4, 2025
Stacking III-Nitride Ultraviolet-B Light Emitters with High Efficiency via a Lattice-Engineered ArchitectureZiyao Zhang, Jiaming Wang, Fujun Xu, et al.
Fundamental Research|June 27, 2024
Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrateHuapeng Liu, Bowen Sheng, Tao Wang, et al.
Nano Letters|December 24, 2015
Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor NanowiresPing Wang, Ying Yuan, Chao Zhao, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|November 11, 2020
Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting DiodesFang Liu, Ye Yu, Yuantao Zhang, et al.
Scientific Reports|October 7, 2014
Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructuresJiaming Wang, Fujun Xu, Xia Zhang, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|December 21, 2025
Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity LengthChen Ji, Jiaming Wang, Fujun Xu, et al.
Pageof 5

Showing results (31-40 of 46) with videos related to

Sort By:
Pageof 5
Nano Letters|April 26, 2013
Tunable surface electron spin splitting with electric double-layer transistors based on InNChunming Yin, Hongtao Yuan, Xinqiang Wang, et al.
Physical Review Letters|February 21, 2025
Atomistic Understanding of Dislocation Climb in Nitride Semiconductors: Role of Asymmetric JogsHan Yang, Xiangru Han, Xuelin Yang, et al.
Scientific Reports|March 11, 2016
Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al compositionJianpeng Cheng, Xuelin Yang, Ling Sang, et al.
Sensors (Basel, Switzerland)|July 1, 2018
Enhanced Hydrogen Detection Based on Mg-Doped InN EpilayerShibo Wang, Xinqiang Wang, Zhaoying Chen, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 4, 2025
Stacking III-Nitride Ultraviolet-B Light Emitters with High Efficiency via a Lattice-Engineered ArchitectureZiyao Zhang, Jiaming Wang, Fujun Xu, et al.
Fundamental Research|June 27, 2024
Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrateHuapeng Liu, Bowen Sheng, Tao Wang, et al.
Nano Letters|December 24, 2015
Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor NanowiresPing Wang, Ying Yuan, Chao Zhao, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|November 11, 2020
Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting DiodesFang Liu, Ye Yu, Yuantao Zhang, et al.
Scientific Reports|October 7, 2014
Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructuresJiaming Wang, Fujun Xu, Xia Zhang, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|December 21, 2025
Wafer Scale III-Nitride Deep-Ultraviolet Vertical-Cavity Surface-Emitting Lasers Featuring Nanometer-Class Control of Cavity LengthChen Ji, Jiaming Wang, Fujun Xu, et al.
Pageof 5