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G Eyink

Showing results (1-10 of 7) with videos related to

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Physical Review Letters|April 6, 2001
Universal decay of scalar turbulenceM Chaves, G Eyink, U Frisch, et al.
Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences|April 8, 2015
Turbulent reconnection and its implicationsA Lazarian, G Eyink, E Vishniac, et al.
Ultramicroscopy|January 10, 2013
Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEMKrishnamurthy Mahalingam, Heather J Haugan, Gail J Brown, et al.
IEEE Transactions on Neural Networks|January 1, 1996
Neural-net computing for interpretation of semiconductor film optical ellipsometry parametersG H Park, Y H Pao, B Igelnik, et al.
Journal of Microscopy|May 28, 2008
Compositional analysis of mixed-cation-anion III-V semiconductor interfaces using phase retrieval high-resolution transmission electron microscopyK Mahalingam, K G Eyink, G J Brown, et al.
ACS Nano|February 6, 2010
Influence of alumina type on the evolution and activity of alumina-supported Fe catalysts in single-walled carbon nanotube carpet growthPlacidus B Amama, Cary L Pint, Seung Min Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 24, 2010
Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE)Jeongho Park, William C Mitchel, Lawrence Grazulis, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Physical Review Letters|April 6, 2001
Universal decay of scalar turbulenceM Chaves, G Eyink, U Frisch, et al.
Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences|April 8, 2015
Turbulent reconnection and its implicationsA Lazarian, G Eyink, E Vishniac, et al.
Ultramicroscopy|January 10, 2013
Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEMKrishnamurthy Mahalingam, Heather J Haugan, Gail J Brown, et al.
IEEE Transactions on Neural Networks|January 1, 1996
Neural-net computing for interpretation of semiconductor film optical ellipsometry parametersG H Park, Y H Pao, B Igelnik, et al.
Journal of Microscopy|May 28, 2008
Compositional analysis of mixed-cation-anion III-V semiconductor interfaces using phase retrieval high-resolution transmission electron microscopyK Mahalingam, K G Eyink, G J Brown, et al.
ACS Nano|February 6, 2010
Influence of alumina type on the evolution and activity of alumina-supported Fe catalysts in single-walled carbon nanotube carpet growthPlacidus B Amama, Cary L Pint, Seung Min Kim, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 24, 2010
Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE)Jeongho Park, William C Mitchel, Lawrence Grazulis, et al.
Pageof 1