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Nanoscale|February 18, 2014
Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide filmSrikrishna Pandey, Chandan Biswas, Titisa Ghosh, et al.ACS Nano|October 23, 2025
Highly Reliable MoS2 Flash Memory with Ultrathin TaOx Tunneling Layer Formed via Partial Oxidation of TaS2 Floating GateHoseong Shin, Yunseo Song, Kwangro Lee, et al.Nanotechnology|March 25, 2025
Electrostatic control of transconductance oscillations in MoS2/WSe2heterostructureNhat Anh Nguyen Phan, Inayat Uddin, Hai Yen Le Thi, et al.Small (Weinheim an Der Bergstrasse, Germany)|October 10, 2022
Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual ContactsHai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, et al.Nanotechnology|July 4, 2018
High performance self-gating graphene/MoS2 diode enabled by asymmetric contactsMuhammad Atif Khan, Servin Rathi, Changhee Lee, et al.Nano Letters|June 20, 2015
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure DevicesServin Rathi, Inyeal Lee, Dongsuk Lim, et al.Scientific Reports|May 10, 2018
Observation of negative differential resistance in mesoscopic graphene oxide devicesServin Rathi, Inyeal Lee, Moonshik Kang, et al.Nanoscale|January 12, 2017
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatmentMoonshik Kang, Servin Rathi, Inyeal Lee, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|April 14, 2017
Shubnikov-de Haas measurements on a high mobility monolayer graphene flake sandwiched between boron nitride sheetsNaoki Matsumoto, Masaaki Mineharu, Masahiro Matsunaga, et al.Nanotechnology|June 19, 2015
Construction and characterization of Cu²⁺, Ni²⁺, Zn²⁺, and Co²⁺ modified-DNA crystalsSreekantha Reddy Dugasani, Myoungsoon Kim, In-yeal Lee, et al.Pageof 6