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Nanomaterials (Basel, Switzerland)
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November 26, 2025
From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications
Nikolay Petkov, Giorgos Fagas
Nano Letters
|
April 7, 2009
Ballistic conductance in oxidized Si nanowires
Giorgos Fagas, James C Greer
Nanotechnology
|
July 7, 2011
Tunnelling in alkanes anchored to gold electrodes via amine end groups
Giorgos Fagas, James C Greer
Physical Chemistry Chemical Physics : PCCP
|
October 6, 2012
Surface orientation effects in crystalline-amorphous silicon interfaces
Michael Nolan, Merid Legesse, Giorgos Fagas
Physical Chemistry Chemical Physics : PCCP
|
April 26, 2016
Binary functionalization of H:Si(111) surfaces by alkyl monolayers with different linker atoms enhances monolayer stability and packing
Hadi H Arefi, Michael Nolan, Giorgos Fagas
Langmuir : the ACS Journal of Surfaces and Colloids
|
September 27, 2014
Density functional theory with van der waals corrections study of the adsorption of alkyl, alkylthiol, alkoxyl, and amino-alkyl chains on the H:Si(111) surface
Hadi H Arefi, Michael Nolan, Giorgos Fagas
The Journal of Chemical Physics
|
January 4, 2007
Determination of complex absorbing potentials from the electron self-energy
Thomas M Henderson, Giorgos Fagas, Eoin Hyde, et al.
Nano Letters
|
April 17, 2012
A proposed confinement modulated gap nanowire transistor based on a metal (tin)
Lida Ansari, Giorgos Fagas, Jean-Pierre Colinge, et al.
Nano Letters
|
January 11, 2007
Silicon nanowire band gap modification
Michael Nolan, Sean O'Callaghan, Giorgos Fagas, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
March 5, 2014
Divacancies in carbon nanotubes and their influence on electron scattering
Gabriel Greene-Diniz, Sarah L T Jones, Giorgos Fagas, et al.
Page
of 2
Search research articles
Search
Showing results (1-10 of 11) with videos related to
Sort By:
Page
of 2
Nanomaterials (Basel, Switzerland)
|
November 26, 2025
From Field Effect Transistors to Spin Qubits: Focus on Group IV Materials, Architectures and Fabrications
Nikolay Petkov, Giorgos Fagas
Nano Letters
|
April 7, 2009
Ballistic conductance in oxidized Si nanowires
Giorgos Fagas, James C Greer
Nanotechnology
|
July 7, 2011
Tunnelling in alkanes anchored to gold electrodes via amine end groups
Giorgos Fagas, James C Greer
Physical Chemistry Chemical Physics : PCCP
|
October 6, 2012
Surface orientation effects in crystalline-amorphous silicon interfaces
Michael Nolan, Merid Legesse, Giorgos Fagas
Physical Chemistry Chemical Physics : PCCP
|
April 26, 2016
Binary functionalization of H:Si(111) surfaces by alkyl monolayers with different linker atoms enhances monolayer stability and packing
Hadi H Arefi, Michael Nolan, Giorgos Fagas
Langmuir : the ACS Journal of Surfaces and Colloids
|
September 27, 2014
Density functional theory with van der waals corrections study of the adsorption of alkyl, alkylthiol, alkoxyl, and amino-alkyl chains on the H:Si(111) surface
Hadi H Arefi, Michael Nolan, Giorgos Fagas
The Journal of Chemical Physics
|
January 4, 2007
Determination of complex absorbing potentials from the electron self-energy
Thomas M Henderson, Giorgos Fagas, Eoin Hyde, et al.
Nano Letters
|
April 17, 2012
A proposed confinement modulated gap nanowire transistor based on a metal (tin)
Lida Ansari, Giorgos Fagas, Jean-Pierre Colinge, et al.
Nano Letters
|
January 11, 2007
Silicon nanowire band gap modification
Michael Nolan, Sean O'Callaghan, Giorgos Fagas, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
March 5, 2014
Divacancies in carbon nanotubes and their influence on electron scattering
Gabriel Greene-Diniz, Sarah L T Jones, Giorgos Fagas, et al.
Page
of 2