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Ballistic conductance in oxidized Si nanowires
1Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland. georgios.fagas@tyndall.ie
Nano Letters
|April 7, 2009
Summary
Local oxidation in silicon nanowires minimally impacts hole transport, with mean free paths exceeding device lengths. [110]-oriented nanowires show superior hole mobility compared to [100] orientations.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Silicon nanowires are crucial for nanoelectronics.
- Surface oxidation can affect charge carrier transport.
- Understanding oxidation effects is vital for device performance.
Purpose of the Study:
- Investigate the impact of local oxidation on hole transport in silicon nanowires.
- Analyze the influence of silicon atom oxidation states at the surface.
- Compare hole transport in [110] and [100] oriented nanowires.
Main Methods:
- Density functional theory (DFT) calculations.
- Green's function scattering method.
- Simulations of silicon nanowires with varying oxidation states.
Main Results:
- Oxygen incorporation does not significantly degrade hole transport in [110] silicon nanowires.
- Mean free paths for holes are comparable to or longer than projected device lengths.
- Hole transport is less favorable in [100]-oriented nanowires.
Conclusions:
- Surface oxidation has a limited negative effect on hole transport in [110] silicon nanowires.
- [110] nanowire orientation offers an advantage for hole mobility in nanoelectronic applications.
- The findings support the use of [110] silicon nanowires in future electronic devices.
