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ACS Applied Materials & Interfaces
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September 15, 2022
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO<sub>2</sub>/HZO) Bilayer Heterostructures and High-Pressure Annealing
Venkateswarlu Gaddam, Giuk Kim, Taeho Kim, et al.
ACS Applied Materials & Interfaces
|
November 17, 2022
Steep-Slope Transistor with an Imprinted Antiferroelectric Film
Sangho Lee, Yongsun Lee, Taeho Kim, et al.
Nano Convergence
|
May 23, 2026
TiO<sub>2</sub> nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory
Hyunjun Kang, Junhyeok Kwak, Giuk Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
August 23, 2025
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems
Giuk Kim, Sangho Lee, Hyojun Choi, et al.
ACS Applied Materials & Interfaces
|
December 28, 2022
Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors
Giuk Kim, Dong Han Ko, Taeho Kim, et al.
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of 1
Search research articles
Search
Showing results (1-10 of 5) with videos related to
Sort By:
Page
of 1
ACS Applied Materials & Interfaces
|
September 15, 2022
Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO<sub>2</sub>/HZO) Bilayer Heterostructures and High-Pressure Annealing
Venkateswarlu Gaddam, Giuk Kim, Taeho Kim, et al.
ACS Applied Materials & Interfaces
|
November 17, 2022
Steep-Slope Transistor with an Imprinted Antiferroelectric Film
Sangho Lee, Yongsun Lee, Taeho Kim, et al.
Nano Convergence
|
May 23, 2026
TiO<sub>2</sub> nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory
Hyunjun Kang, Junhyeok Kwak, Giuk Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|
August 23, 2025
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems
Giuk Kim, Sangho Lee, Hyojun Choi, et al.
ACS Applied Materials & Interfaces
|
December 28, 2022
Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors
Giuk Kim, Dong Han Ko, Taeho Kim, et al.
Page
of 1