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Langmuir : the ACS Journal of Surfaces and Colloids|May 29, 2015
In Situ Conductance Analysis of Zinc Oxide Nucleation and Coalescence during Atomic Layer Deposition on Metal Oxides and PolymersWilliam J Sweet, Gregory N ParsonsACS Applied Materials & Interfaces|January 27, 2011
Atomic layer deposition of Al(2)O(3) and ZnO at atmospheric pressure in a flow tube reactorJesse S Jur, Gregory N ParsonsThe Journal of Physical Chemistry. B|April 26, 2011
Conformal organic-inorganic hybrid network polymer thin films by molecular layer deposition using trimethylaluminum and glycidolBo Gong, Qing Peng, Gregory N ParsonsNanotechnology|March 11, 2011
Making inert polypropylene fibers chemically responsive by combining atomic layer deposition and vapor phase chemical graftingQing Peng, Bo Gong, Gregory N ParsonsJournal of Physics. Condensed Matter : an Institute of Physics Journal|March 11, 2011
Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer depositionGiovanna Scarel, Jeong-Seok Na, Gregory N ParsonsLangmuir : the ACS Journal of Surfaces and Colloids|July 20, 2012
Mesoporous metal oxides by vapor infiltration and atomic layer deposition on ordered surfactant polymer filmsBo Gong, Do Han Kim, Gregory N ParsonsACS Applied Materials & Interfaces|July 1, 2014
Free-floating synthetic nanosheets by atomic layer depositionKyoungmi Lee, Do Han Kim, Gregory N ParsonsJournal of the American Chemical Society|February 7, 2007
Conductivity in alkylamine/gold and alkanethiol/gold molecular junctions measured in molecule/nanoparticle/molecule bridges and conducting probe structuresChangwoong Chu, Jeong-Seok Na, Gregory N ParsonsThe Journal of Chemical Physics|February 10, 2017
Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALDPaul C Lemaire, Mariah King, Gregory N ParsonsACS Applied Materials & Interfaces|February 21, 2018
Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF<sub>6</sub> and O<sub>2</sub>Wenyi Xie, Paul C Lemaire, Gregory N ParsonsPageof 9