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ACS Applied Materials & Interfaces
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January 15, 2025
Lateral Carrier Diffusion in Ion-Implanted Ultra-Small Blue III-Nitride MicroLEDs
Julia Slawinska, Grzegorz Muziol, Anna Kafar, et al.
ACS Photonics
|
March 24, 2025
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum Wells
Mateusz Hajdel, Krzysztof Gołyga, Marcin Siekacz, et al.
Materials (Basel, Switzerland)
|
September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nanoscale
|
March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
Marta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)
|
January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Nature Communications
|
November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating current
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
ACS Applied Materials & Interfaces
|
June 20, 2026
Air-Cladding Blue Laser Diodes
Marta Sawicka, Mateusz Hajdel, Oliwia Gołyga, et al.
Crystal Growth & Design
|
July 10, 2023
Nanostars in Highly Si-Doped GaN
Marta Sawicka, Henryk Turski, Kamil Sobczak, et al.
Optics Express
|
April 27, 2022
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, et al.
Materials (Basel, Switzerland)
|
February 11, 2023
Polarization Doping in a GaN-InN System-Ab Initio Simulation
Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, et al.
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Search research articles
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Showing results (1-10 of 10) with videos related to
Sort By:
Page
of 1
ACS Applied Materials & Interfaces
|
January 15, 2025
Lateral Carrier Diffusion in Ion-Implanted Ultra-Small Blue III-Nitride MicroLEDs
Julia Slawinska, Grzegorz Muziol, Anna Kafar, et al.
ACS Photonics
|
March 24, 2025
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum Wells
Mateusz Hajdel, Krzysztof Gołyga, Marcin Siekacz, et al.
Materials (Basel, Switzerland)
|
September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN
Henryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nanoscale
|
March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
Marta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)
|
January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Nature Communications
|
November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating current
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
ACS Applied Materials & Interfaces
|
June 20, 2026
Air-Cladding Blue Laser Diodes
Marta Sawicka, Mateusz Hajdel, Oliwia Gołyga, et al.
Crystal Growth & Design
|
July 10, 2023
Nanostars in Highly Si-Doped GaN
Marta Sawicka, Henryk Turski, Kamil Sobczak, et al.
Optics Express
|
April 27, 2022
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, et al.
Materials (Basel, Switzerland)
|
February 11, 2023
Polarization Doping in a GaN-InN System-Ab Initio Simulation
Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, et al.
Page
of 1