Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Guangshuo Cai

Showing results (1-10 of 3) with videos related to

Pageof 1
Sort By:
The Journal of Physical Chemistry Letters|March 20, 2020
Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide DielectricsXiaoci Liang, Ling Liu, Guangshuo Cai, et al.
Micromachines|September 28, 2023
Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by SimulationGuangshuo Cai, Caoyuan Mu, Jiaosheng Li, et al.
ACS Applied Materials & Interfaces|July 12, 2018
Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO MemristorYa Li, Jinxing Chu, Weijie Duan, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
The Journal of Physical Chemistry Letters|March 20, 2020
Evidence for Pseudocapacitance and Faradaic Charge Transfer in High-Mobility Thin-Film Transistors with Solution-Processed Oxide DielectricsXiaoci Liang, Ling Liu, Guangshuo Cai, et al.
Micromachines|September 28, 2023
Vertical Diamond p-n Junction Diode with Step Edge Termination Structure Designed by SimulationGuangshuo Cai, Caoyuan Mu, Jiaosheng Li, et al.
ACS Applied Materials & Interfaces|July 12, 2018
Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO MemristorYa Li, Jinxing Chu, Weijie Duan, et al.
Pageof 1