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Gun Hwan Kim

Showing results (1-10 of 22) with videos related to

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ACS Applied Materials & Interfaces|December 3, 2025
Effect of Indium Doping on the Reliability Characteristics of Chalcogenide GeSbSeTe Thin-Film-Based Selector-Only Memory DevicesWon Hee Jeong, Soo Hyun Lee, Gun Hwan Kim
Materials Horizons|April 7, 2026
A tellurium-free GeSbSe thin film for reliable selector-only memory operationInchan Oh, Won Hee Jeong, Jaeho Jung, et al.
Scientific Reports|September 15, 2015
Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin FilmMin Kyu Yang, Hyunsu Ju, Gun Hwan Kim, et al.
Nanoscale|April 9, 2025
Enhancing stability and iterative learning in neuromorphic memristor <i>via</i> TiN/SiO<sub></sub>/TiN interface engineeringHyun Kyu Seo, Jae-Seung Jeong, Jaeho Jung, et al.
ACS Applied Materials & Interfaces|February 2, 2019
Fully "Erase-free" Multi-Bit Operation in HfO<sub>2</sub>-Based Resistive Switching DeviceJin Joo Ryu, Kanghyeok Jeon, Seungmin Yeo, et al.
ACS Applied Materials & Interfaces|December 5, 2024
Structural Optimization of Chalcogenide Thin Films for Enhancing the Threshold Switching PerformanceJin Joo Ryu, Kanghyeok Jeon, Hyun Kyu Seo, et al.
ACS Nano|June 20, 2026
4K Self-Rectifying Resistive Memory Crossbar Array for Reliable Pattern RecognitionIk Joon Seo, Dong Chan Lee, Kanghyeok Jeon, et al.
Nature Communications|May 21, 2021
Self-rectifying resistive memory in passive crossbar arraysKanghyeok Jeon, Jeeson Kim, Jin Joo Ryu, et al.
Nanotechnology|April 20, 2010
A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arraysWoo Young Park, Gun Hwan Kim, Jun Yeong Seok, et al.
Scientific Reports|December 7, 2013
Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAMSeul Ji Song, Jun Yeong Seok, Jung Ho Yoon, et al.
Pageof 3

Showing results (1-10 of 22) with videos related to

Sort By:
Pageof 3
ACS Applied Materials & Interfaces|December 3, 2025
Effect of Indium Doping on the Reliability Characteristics of Chalcogenide GeSbSeTe Thin-Film-Based Selector-Only Memory DevicesWon Hee Jeong, Soo Hyun Lee, Gun Hwan Kim
Materials Horizons|April 7, 2026
A tellurium-free GeSbSe thin film for reliable selector-only memory operationInchan Oh, Won Hee Jeong, Jaeho Jung, et al.
Scientific Reports|September 15, 2015
Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin FilmMin Kyu Yang, Hyunsu Ju, Gun Hwan Kim, et al.
Nanoscale|April 9, 2025
Enhancing stability and iterative learning in neuromorphic memristor <i>via</i> TiN/SiO<sub></sub>/TiN interface engineeringHyun Kyu Seo, Jae-Seung Jeong, Jaeho Jung, et al.
ACS Applied Materials & Interfaces|February 2, 2019
Fully "Erase-free" Multi-Bit Operation in HfO<sub>2</sub>-Based Resistive Switching DeviceJin Joo Ryu, Kanghyeok Jeon, Seungmin Yeo, et al.
ACS Applied Materials & Interfaces|December 5, 2024
Structural Optimization of Chalcogenide Thin Films for Enhancing the Threshold Switching PerformanceJin Joo Ryu, Kanghyeok Jeon, Hyun Kyu Seo, et al.
ACS Nano|June 20, 2026
4K Self-Rectifying Resistive Memory Crossbar Array for Reliable Pattern RecognitionIk Joon Seo, Dong Chan Lee, Kanghyeok Jeon, et al.
Nature Communications|May 21, 2021
Self-rectifying resistive memory in passive crossbar arraysKanghyeok Jeon, Jeeson Kim, Jin Joo Ryu, et al.
Nanotechnology|April 20, 2010
A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arraysWoo Young Park, Gun Hwan Kim, Jun Yeong Seok, et al.
Scientific Reports|December 7, 2013
Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAMSeul Ji Song, Jun Yeong Seok, Jung Ho Yoon, et al.
Pageof 3