Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

4K Self-Rectifying Resistive Memory Crossbar Array for Reliable Pattern Recognition.

ACS nano·2026
Same author

Direct Observation of Conduction Mechanism in Te-Based Selector-Only Memory via Low-Frequency Noise Characterization.

Nano letters·2026
Same author

A tellurium-free GeSbSe thin film for reliable selector-only memory operation.

Materials horizons·2026
Same author

Effect of Indium Doping on the Reliability Characteristics of Chalcogenide GeSbSeTe Thin-Film-Based Selector-Only Memory Devices.

ACS applied materials & interfaces·2025
Same author

Enhancing stability and iterative learning in neuromorphic memristor <i>via</i> TiN/SiO<sub></sub>/TiN interface engineering.

Nanoscale·2025
Same author

Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods.

Materials (Basel, Switzerland)·2025

Related Experiment Video

Updated: Jun 5, 2025

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
08:38

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Published on: August 19, 2016

8.5K

Structural Optimization of Chalcogenide Thin Films for Enhancing the Threshold Switching Performance.

Jin Joo Ryu1,2, Kanghyeok Jeon3, Hyun Kyu Seo4

  • 1Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea.

ACS Applied Materials & Interfaces
|December 5, 2024
PubMed
Summary

Controlling the chemical composition of germanium telluride (GeTe) thin films is crucial for reliable threshold switching (TS) devices. Optimizing Te content and maintaining amorphous structure ensures stable TS performance.

Keywords:
Urbach energychalcogenide thin filmelectronic trapgermanium tellurideovonic threshold switch

More Related Videos

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K

Related Experiment Videos

Last Updated: Jun 5, 2025

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
08:38

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Published on: August 19, 2016

8.5K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.1K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Device Physics

Background:

  • Threshold switching (TS) devices rely on the unique properties of phase-change materials like germanium telluride (GeTe).
  • Understanding the relationship between GeTe's physical characteristics and its TS behavior is vital for device reliability.
  • Variations in chemical composition significantly impact material properties and device performance.

Purpose of the Study:

  • To investigate the physical properties of germanium telluride (GeTe) thin films.
  • To establish fundamental relationships between GeTe's physical and electronic properties and threshold switching (TS) characteristics.
  • To identify key conditions for achieving stable and reliable TS behavior in GeTe-based devices.

Main Methods:

  • Comprehensive investigation of GeTe thin films with varying chemical compositions.
  • Analysis of crystallinity, atomic vibration modes, chemical binding, bandgap, and electronic trap distribution.
  • Correlation of electrical properties with physical characteristics to determine TS behavior.

Main Results:

  • Increased tellurium (Te) content in GeTe films elevates Urbach energy and reduces the bandgap.
  • Trap energy generally increases with higher Te content, except for GT8.
  • Stable TS behavior requires amorphous crystallinity, optimized GeTe composition, and appropriate bandgap and trap energy.

Conclusions:

  • Precise control over the chemical composition of GeTe thin films is paramount for reliable TS performance.
  • The study provides insights into bonding structures and material optimization for Te-based binary TS systems.
  • Findings guide the development of advanced electronic devices utilizing GeTe materials.