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Advanced Materials (Deerfield Beach, Fla.)|October 27, 2015
In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory DeviceHe Tian, Haiming Zhao, Xue-Feng Wang, et al.Nature|March 6, 2020
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)Tse-An Chen, Chih-Piao Chuu, Chien-Chih Tseng, et al.Physical Review Letters|August 20, 2016
Picosecond Electric-Field-Induced Threshold Switching in Phase-Change MaterialsPeter Zalden, Michael J Shu, Frank Chen, et al.Nano Letters|March 3, 2025
Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube TransistorsHsin-Yuan Chiu, Nathaniel Safron, Matthias Passlack, et al.ACS Nano|June 29, 2023
Recent Advances and Future Prospects for Memristive Materials, Devices, and SystemsMin-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, et al.Pageof 9