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Nanoscale Advances|May 31, 2024
UV-assisted nanoimprint lithography: the impact of the loading effect in silicon on nanoscale patterns of metalensZahrah Alnakhli, Zhiyuan Liu, Feras AlQatari, et al.
Optics Express|May 15, 2020
Optical and frequency degradation behavior of GaN-based micro-LEDs for visible light communicationZhanhong Ma, Haicheng Cao, Shan Lin, et al.
ACS Applied Materials & Interfaces|January 20, 2018
Light Modulation and Water Splitting Enhancement Using a Composite Porous GaN StructureChao Yang, Xin Xi, Zhiguo Yu, et al.
Light, Science & Applications|January 25, 2025
Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effectZhiyuan Liu, Haicheng Cao, Xiao Tang, et al.
Optics Express|May 5, 2017
Enhancing the spontaneous emission rate by modulating carrier distribution in GaN-based surface plasmon light-emitting diodesShichao Zhu, Zhiguo Yu, Lei Liu, et al.
Light, Science & Applications|January 8, 2025
Machine learning assisted plasmonic metascreen for enhanced broadband absorption in ultra-thin silicon filmsWaqas W Ahmed, Haicheng Cao, Changqing Xu, et al.
Optics Letters|August 15, 2024
Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etchingZhiyuan Liu, Tingang Liu, Haicheng Cao, et al.
Optics Letters|May 23, 2023
Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxyZhiyuan Liu, Mingtao Nong, Yi Lu, et al.
Light, Science & Applications|May 23, 2024
Etching-free pixel definition in InGaN green micro-LEDsZhiyuan Liu, Yi Lu, Haicheng Cao, et al.
Nanoscale|July 10, 2019
Hybrid light emitting diodes based on stable, high brightness all-inorganic CsPbI<sub>3</sub> perovskite nanocrystals and InGaNChengxi Zhang, Lyudmila Turyanska, Haicheng Cao, et al.
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