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ACS Applied Materials & Interfaces
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February 15, 2019
Defect-Affected Photocurrent in MoTe<sub>2</sub> FETs
Mohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul, et al.
Nanotechnology
|
October 7, 2023
Investigating charge traps in MoTe<sub>2</sub>field-effect transistors: SiO<sub>2</sub>insulator traps and MoTe<sub>2</sub>bulk traps
Giheon Kim, Dang Xuan Dang, Hamza Zad Gul, et al.
ACS Applied Materials & Interfaces
|
August 9, 2017
Tunable Mobility in Double-Gated MoTe<sub>2</sub> Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites
Hyunjin Ji, Min-Kyu Joo, Hojoon Yi, et al.
ACS Nano
|
November 13, 2019
Edge Contact for Carrier Injection and Transport in MoS<sub>2</sub> Field-Effect Transistors
Homin Choi, Byoung Hee Moon, Jung Ho Kim, et al.
Nano Letters
|
December 29, 2016
Photocurrent Switching of Monolayer MoS<sub>2</sub> Using a Metal-Insulator Transition
Jin Hee Lee, Hamza Zad Gul, Hyun Kim, et al.
Nano Letters
|
June 22, 2022
Optical Duality of Molybdenum Disulfide: Metal and Semiconductor
Wonkil Sakong, Hamza Zad Gul, Byungwook Ahn, et al.
ACS Applied Materials & Interfaces
|
July 18, 2019
Temperature-Dependent Opacity of the Gate Field Inside MoS<sub>2</sub> Field-Effect Transistors
Hyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, et al.
ACS Applied Materials & Interfaces
|
May 3, 2019
Semimetallic Graphene for Infrared Sensing
Hamza Zad Gul, Wonkil Sakong, Hyunjin Ji, et al.
Nano Letters
|
August 30, 2023
One-Step Passivation of Both Sulfur Vacancies and SiO<sub>2</sub> Interface Traps of MoS<sub>2</sub> Device
Byungwook Ahn, Yoonsok Kim, Meeree Kim, et al.
Nature Communications
|
May 20, 2026
Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers
Ngoc Thanh Duong, Swathi Krishna, Minh Chien Nguyen, et al.
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Search research articles
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Showing results (1-10 of 10) with videos related to
Sort By:
Page
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ACS Applied Materials & Interfaces
|
February 15, 2019
Defect-Affected Photocurrent in MoTe<sub>2</sub> FETs
Mohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul, et al.
Nanotechnology
|
October 7, 2023
Investigating charge traps in MoTe<sub>2</sub>field-effect transistors: SiO<sub>2</sub>insulator traps and MoTe<sub>2</sub>bulk traps
Giheon Kim, Dang Xuan Dang, Hamza Zad Gul, et al.
ACS Applied Materials & Interfaces
|
August 9, 2017
Tunable Mobility in Double-Gated MoTe<sub>2</sub> Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites
Hyunjin Ji, Min-Kyu Joo, Hojoon Yi, et al.
ACS Nano
|
November 13, 2019
Edge Contact for Carrier Injection and Transport in MoS<sub>2</sub> Field-Effect Transistors
Homin Choi, Byoung Hee Moon, Jung Ho Kim, et al.
Nano Letters
|
December 29, 2016
Photocurrent Switching of Monolayer MoS<sub>2</sub> Using a Metal-Insulator Transition
Jin Hee Lee, Hamza Zad Gul, Hyun Kim, et al.
Nano Letters
|
June 22, 2022
Optical Duality of Molybdenum Disulfide: Metal and Semiconductor
Wonkil Sakong, Hamza Zad Gul, Byungwook Ahn, et al.
ACS Applied Materials & Interfaces
|
July 18, 2019
Temperature-Dependent Opacity of the Gate Field Inside MoS<sub>2</sub> Field-Effect Transistors
Hyunjin Ji, Mohan Kumar Ghimire, Gwanmu Lee, et al.
ACS Applied Materials & Interfaces
|
May 3, 2019
Semimetallic Graphene for Infrared Sensing
Hamza Zad Gul, Wonkil Sakong, Hyunjin Ji, et al.
Nano Letters
|
August 30, 2023
One-Step Passivation of Both Sulfur Vacancies and SiO<sub>2</sub> Interface Traps of MoS<sub>2</sub> Device
Byungwook Ahn, Yoonsok Kim, Meeree Kim, et al.
Nature Communications
|
May 20, 2026
Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers
Ngoc Thanh Duong, Swathi Krishna, Minh Chien Nguyen, et al.
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of 1