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Optics Express|February 18, 2026
Modeling of internal quantum efficiency in micro-LEDs with surface nonradiative recombinationHan-Youl Ryu, Dae-Myeong GeumOptics Express|November 23, 2021
Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nmJunho Jang, Dae-Myeong Geum, SangHyeon KimNanoscale Research Letters|February 6, 2014
Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structuresHan-Youl RyuJournal of Nanoscience and Nanotechnology|May 12, 2015
Strong modification of spontaneous emission rate in nanorod light-emitting diode structuresHan-Youl RyuOptics Express|September 26, 2015
Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effectHan-Youl RyuNanoscale Research Letters|May 24, 2017
Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical SimulationHan-Youl RyuNanoscale Research Letters|March 1, 2022
Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LEDJuhyuk Park, Woojin Baek, Dae-Myeong Geum, et al.Nanomaterials (Basel, Switzerland)|September 13, 2024
Optimum Design of InGaN Blue Laser Diodes with Indium-Tin-Oxide and Dielectric Cladding LayersChibuzo Onwukaeme, Han-Youl RyuNanoscale Research Letters|December 19, 2022
Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-SiHoSung Kim, Dae-Myeong Geum, Young-Ho Ko, et al.Optics Express|July 9, 2008
Effect of active-layer structures on temperature characteristics of InGaN blue laser diodesHan-Youl Ryu, Kyoung-Ho HaPageof 4