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Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED.

Juhyuk Park¹, Woojin Baek¹, Dae-Myeong Geum²

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Nanoscale Research Letters

|March 1, 2022

Summary

Sulfur and Al2O3 passivation significantly enhance red micro-light-emitting-diodes (LEDs) performance. Passivation improved external quantum efficiency (EQE) by 20% and reduced surface recombination velocity by 14%.

Keywords:

AlGaInP/GaInP MQW Micro-LED Passivation

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Micro-light-emitting-diodes (LEDs) are crucial optoelectronic devices.
Passivation is essential for improving LED performance by reducing surface defects.

Purpose of the Study:

To investigate the passivation effects of sulfur treatment and Al2O3 on AlGaInP/GaInP red micro-LEDs.
To compare electrical and optical characteristics of passivated and unpassivated micro-LEDs of various sizes.

Main Methods:

Systematic comparison of electrical (current density-voltage) and optical (external quantum efficiency - EQE) characteristics.
Analysis using the ABC recombination model to examine passivation effects.
Methodology established to investigate sidewall influence in micro-LEDs.

Main Results:

External quantum efficiency (EQE) enhanced by 20% for passivated micro-LEDs.
Peak EQE current density (JEQE, peak) shifted to lower values.
Surface recombination velocity reduced by approximately 14% due to passivation.
Simple electrical characteristics were insufficient to precisely reflect minor passivation-induced property changes in low-leakage devices.

Conclusions:

Sulfur and Al2O3 passivation effectively improve the performance of AlGaInP/GaInP red micro-LEDs.
Passivation significantly enhances EQE and reduces surface recombination, particularly beneficial for smaller devices.
The study provides a methodology for analyzing sidewall effects and quantifying passivation efficacy in micro-LEDs.