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Hangbing Lv

Showing results (11-20 of 36) with videos related to

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Nanoscale|April 25, 2013
Bipolar one diode-one resistor integration for high-density resistive memory applicationsYingtao Li, Hangbing Lv, Qi Liu, et al.
Nanotechnology|December 9, 2017
Negative differential resistance effect induced by metal ion implantation in SiO<sub>2</sub> film for multilevel RRAM applicationFacai Wu, Shuyao Si, Tuo Shi, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 13, 2012
Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAMQi Liu, Jun Sun, Hangbing Lv, et al.
Nature Communications|August 21, 2014
Thermoelectric Seebeck effect in oxide-based resistive switching memoryMing Wang, Chong Bi, Ling Li, et al.
Scientific Reports|September 13, 2017
Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo SimulatorYu Li, Meiyun Zhang, Shibing Long, et al.
Nanoscale Research Letters|October 27, 2015
Conductance Quantization in Resistive Random Access MemoryYang Li, Shibing Long, Yang Liu, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 18, 2016
Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based MemorySen Liu, Nianduan Lu, Xiaolong Zhao, et al.
Scientific Reports|August 28, 2015
Thermal crosstalk in 3-dimensional RRAM crossbar arrayPengxiao Sun, Nianduan Lu, Ling Li, et al.
Scientific Reports|January 15, 2015
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memoryHangbing Lv, Xiaoxin Xu, Hongtao Liu, et al.
Scientific Reports|August 22, 2015
Atomic View of Filament Growth in Electrochemical Memristive ElementsHangbing Lv, Xiaoxin Xu, Pengxiao Sun, et al.
Pageof 4

Showing results (11-20 of 36) with videos related to

Sort By:
Pageof 4
Nanoscale|April 25, 2013
Bipolar one diode-one resistor integration for high-density resistive memory applicationsYingtao Li, Hangbing Lv, Qi Liu, et al.
Nanotechnology|December 9, 2017
Negative differential resistance effect induced by metal ion implantation in SiO<sub>2</sub> film for multilevel RRAM applicationFacai Wu, Shuyao Si, Tuo Shi, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 13, 2012
Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAMQi Liu, Jun Sun, Hangbing Lv, et al.
Nature Communications|August 21, 2014
Thermoelectric Seebeck effect in oxide-based resistive switching memoryMing Wang, Chong Bi, Ling Li, et al.
Scientific Reports|September 13, 2017
Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo SimulatorYu Li, Meiyun Zhang, Shibing Long, et al.
Nanoscale Research Letters|October 27, 2015
Conductance Quantization in Resistive Random Access MemoryYang Li, Shibing Long, Yang Liu, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 18, 2016
Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based MemorySen Liu, Nianduan Lu, Xiaolong Zhao, et al.
Scientific Reports|August 28, 2015
Thermal crosstalk in 3-dimensional RRAM crossbar arrayPengxiao Sun, Nianduan Lu, Ling Li, et al.
Scientific Reports|January 15, 2015
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memoryHangbing Lv, Xiaoxin Xu, Hongtao Liu, et al.
Scientific Reports|August 22, 2015
Atomic View of Filament Growth in Electrochemical Memristive ElementsHangbing Lv, Xiaoxin Xu, Pengxiao Sun, et al.
Pageof 4