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Updated: Apr 5, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Thermal crosstalk in 3-dimensional RRAM crossbar array.

Pengxiao Sun1,2,3, Nianduan Lu1,2, Ling Li1,2

  • 1Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 China.

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|August 28, 2015
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Summary
This summary is machine-generated.

Thermal crosstalk in 3D resistive random access memory (RRAM) arrays degrades performance and can cause data failure. Scaling down feature sizes exacerbates this issue, impacting reliability.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Engineering

Background:

  • High-density 3D crossbar resistive random access memory (RRAM) is crucial for next-generation technologies.
  • Understanding reliability and scaling is vital for 3D RRAM to compete with NAND and NOR memories.
  • Thermal crosstalk is a critical factor in 3D RRAM array performance.

Purpose of the Study:

  • To systematically investigate the thermal crosstalk effect in 3D RRAM crossbar arrays.
  • To analyze the scaling potential of 3D RRAM under thermal influences.
  • To identify methods for mitigating thermal crosstalk and enhancing scalability.

Main Methods:

  • Numerical simulations were employed to study thermal crosstalk.
  • Analysis focused on the impact of Joule heating on device switching behavior.
  • Retention performance and state failure of RRAM cells were examined.

Main Results:

  • The reset process in 3D RRAM arrays is significantly influenced by transient thermal effects.
  • Thermal crosstalk can degrade device retention and cause state failure (LRS to HRS) in adjacent cells.
  • Resistance degradation intensifies with feature size scaling.

Conclusions:

  • Thermal crosstalk poses a significant challenge to the reliability and scalability of 3D RRAM.
  • Mitigation strategies are necessary to overcome thermal effects and enable further miniaturization.
  • The study provides insights and verified methods for advancing 3D RRAM technology.