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Journal of Nanoscience and Nanotechnology|January 5, 2016
Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power ApplicationsSung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, et al.Optics Express|July 10, 2012
Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transportSeongjae Cho, Byung-Gook Park, Changjae Yang, et al.Journal of Nanoscience and Nanotechnology|April 22, 2018
Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless TransistorBo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, et al.Journal of Nanoscience and Nanotechnology|May 12, 2015
A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysisJae Hwa Hwa, Young Jun Yoon, Hwan Gi Lee, et al.Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.Nanoscale|August 1, 2023
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsSeyeong Yang, Taegyun Kim, Sunghun Kim, et al.Nanoscale|August 23, 2023
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsSeyeong Yang, Taegyun Kim, Sunghun Kim, et al.Journal of Nanoscience and Nanotechnology|January 5, 2016
Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed OperationsYoung Jun Yoon, Hye Rim Eun, Jae Hwa Seo, et al.Journal of Nanoscience and Nanotechnology|May 12, 2015
Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, et al.Nature Communications|October 18, 2019
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunctionKi Seok Kim, You Jin Ji, Ki Hyun Kim, et al.Pageof 5