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Hee-Dong Kim

Showing results (11-20 of 65) with videos related to

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ACS Applied Materials & Interfaces|October 30, 2015
Carbon Nanotube Synaptic Transistor Network for Pattern RecognitionSungho Kim, Jinsu Yoon, Hee-Dong Kim, et al.
Nanoscale|August 9, 2023
A self-tuning PID controller based on analog-digital hybrid computing with a double-gate SnS<sub>2</sub> memtransistorShania Rehman, Muhammad Farooq Khan, Hee-Dong Kim, et al.
Nanoscale|January 9, 2020
Parallel weight update protocol for a carbon nanotube synaptic transistor array for accelerating neuromorphic computingSungho Kim, Yongwoo Lee, Hee-Dong Kim, et al.
Nanoscale|November 5, 2019
Precision-extension technique for accurate vector-matrix multiplication with a CNT transistor crossbar arraySungho Kim, Yongwoo Lee, Hee-Dong Kim, et al.
Nature Communications|May 19, 2022
Analog-digital hybrid computing with SnS<sub>2</sub> memtransistor for low-powered sensor fusionShania Rehman, Muhammad Farooq Khan, Hee-Dong Kim, et al.
Journal of Orthopaedic Surgery and Research|November 8, 2017
Tendon split lengthening technique for flexor hallucis longus tendon ruptureJae Yong Park, Chenyu Wang, Hee Dong Kim, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering ProcessMin Ju Yun, Kyeong Heon Kim, Sungho Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|November 3, 2025
Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir ComputingYuseong Jang, Chanmin Hwang, Myoungsu Chae, et al.
Nanomaterials (Basel, Switzerland)|November 26, 2024
Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal AnnealingChanmin Hwang, Taegi Kim, Yuseong Jang, et al.
Journal of Nanoscience and Nanotechnology|July 18, 2013
A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devicesHo-Myoung An, Hee-Dong Kim, Byungcheul Kim, et al.
Pageof 7

Showing results (11-20 of 65) with videos related to

Sort By:
Pageof 7
ACS Applied Materials & Interfaces|October 30, 2015
Carbon Nanotube Synaptic Transistor Network for Pattern RecognitionSungho Kim, Jinsu Yoon, Hee-Dong Kim, et al.
Nanoscale|August 9, 2023
A self-tuning PID controller based on analog-digital hybrid computing with a double-gate SnS<sub>2</sub> memtransistorShania Rehman, Muhammad Farooq Khan, Hee-Dong Kim, et al.
Nanoscale|January 9, 2020
Parallel weight update protocol for a carbon nanotube synaptic transistor array for accelerating neuromorphic computingSungho Kim, Yongwoo Lee, Hee-Dong Kim, et al.
Nanoscale|November 5, 2019
Precision-extension technique for accurate vector-matrix multiplication with a CNT transistor crossbar arraySungho Kim, Yongwoo Lee, Hee-Dong Kim, et al.
Nature Communications|May 19, 2022
Analog-digital hybrid computing with SnS<sub>2</sub> memtransistor for low-powered sensor fusionShania Rehman, Muhammad Farooq Khan, Hee-Dong Kim, et al.
Journal of Orthopaedic Surgery and Research|November 8, 2017
Tendon split lengthening technique for flexor hallucis longus tendon ruptureJae Yong Park, Chenyu Wang, Hee Dong Kim, et al.
Journal of Nanoscience and Nanotechnology|April 22, 2018
Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering ProcessMin Ju Yun, Kyeong Heon Kim, Sungho Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|November 3, 2025
Polarity-Controlled Volatile HfO<sub>2</sub> Memristors with Bimodal Conductance for Neuromorphic Synapses and Reservoir ComputingYuseong Jang, Chanmin Hwang, Myoungsu Chae, et al.
Nanomaterials (Basel, Switzerland)|November 26, 2024
Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal AnnealingChanmin Hwang, Taegi Kim, Yuseong Jang, et al.
Journal of Nanoscience and Nanotechnology|July 18, 2013
A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devicesHo-Myoung An, Hee-Dong Kim, Byungcheul Kim, et al.
Pageof 7