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Heejun Yang

Showing results (41-50 of 72) with videos related to

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Science (New York, N.Y.)|May 19, 2012
Graphene barristor, a triode device with a gate-controlled Schottky barrierHeejun Yang, Jinseong Heo, Seongjun Park, et al.
ACS Nano|February 12, 2011
Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor depositionInsu Jeon, Heejun Yang, Sung-Hoon Lee, et al.
Nature Communications|January 3, 2024
Thermal Hall effects due to topological spin fluctuations in YMnO<sub>3</sub>Ha-Leem Kim, Takuma Saito, Heejun Yang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 19, 2023
A Polymorphic Memtransistor with Tunable Metallic and Semiconducting ChannelYonas Assefa Eshete, Eunji Hwang, Junhyung Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 27, 2020
Ultrashort Vertical-Channel van der Waals Semiconductor TransistorsJinbao Jiang, Manh-Ha Doan, Linfeng Sun, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 26, 2021
Orbital Gating Driven by Giant Stark Effect in Tunneling PhototransistorsEunah Kim, Geunwoo Hwang, Dohyun Kim, et al.
ACS Applied Materials & Interfaces|December 22, 2020
Mitrofanovite, Layered Platinum Telluride, for Active Hydrogen EvolutionDongyeon Bae, Karam Park, Hagyeong Kwon, et al.
ACS Nano|November 14, 2012
Graphene-passivated nickel as an oxidation-resistant electrode for spintronicsBruno Dlubak, Marie-Blandine Martin, Robert S Weatherup, et al.
Nature Communications|May 27, 2023
Multi-neuron connection using multi-terminal floating-gate memristor for unsupervised learningUi Yeon Won, Quoc An Vu, Sung Bum Park, et al.
ACS Nano|July 3, 2014
Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranesMarie-Blandine Martin, Bruno Dlubak, Robert S Weatherup, et al.
Pageof 8

Showing results (41-50 of 72) with videos related to

Sort By:
Pageof 8
Science (New York, N.Y.)|May 19, 2012
Graphene barristor, a triode device with a gate-controlled Schottky barrierHeejun Yang, Jinseong Heo, Seongjun Park, et al.
ACS Nano|February 12, 2011
Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor depositionInsu Jeon, Heejun Yang, Sung-Hoon Lee, et al.
Nature Communications|January 3, 2024
Thermal Hall effects due to topological spin fluctuations in YMnO<sub>3</sub>Ha-Leem Kim, Takuma Saito, Heejun Yang, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 19, 2023
A Polymorphic Memtransistor with Tunable Metallic and Semiconducting ChannelYonas Assefa Eshete, Eunji Hwang, Junhyung Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|February 27, 2020
Ultrashort Vertical-Channel van der Waals Semiconductor TransistorsJinbao Jiang, Manh-Ha Doan, Linfeng Sun, et al.
Advanced Materials (Deerfield Beach, Fla.)|November 26, 2021
Orbital Gating Driven by Giant Stark Effect in Tunneling PhototransistorsEunah Kim, Geunwoo Hwang, Dohyun Kim, et al.
ACS Applied Materials & Interfaces|December 22, 2020
Mitrofanovite, Layered Platinum Telluride, for Active Hydrogen EvolutionDongyeon Bae, Karam Park, Hagyeong Kwon, et al.
ACS Nano|November 14, 2012
Graphene-passivated nickel as an oxidation-resistant electrode for spintronicsBruno Dlubak, Marie-Blandine Martin, Robert S Weatherup, et al.
Nature Communications|May 27, 2023
Multi-neuron connection using multi-terminal floating-gate memristor for unsupervised learningUi Yeon Won, Quoc An Vu, Sung Bum Park, et al.
ACS Nano|July 3, 2014
Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranesMarie-Blandine Martin, Bruno Dlubak, Robert S Weatherup, et al.
Pageof 8