Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Henryk Turski

Showing results (1-10 of 15) with videos related to

Pageof 2
Sort By:
ACS Applied Materials & Interfaces|April 26, 2024
Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDsMikołaj Chlipała, Henryk Turski
Nanomaterials (Basel, Switzerland)|January 24, 2025
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and PolaritiesArtem Bercha, Mikołaj Chlipała, Mateusz Hajdel, et al.
Optics Express|October 29, 2020
Nitride light-emitting diodes for cryogenic temperaturesMikolaj Chlipala, Henryk Turski, Marcin Siekacz, et al.
Optics Express|March 4, 2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodesShyam Bharadwaj, Jeffrey Miller, Kevin Lee, et al.
Materials (Basel, Switzerland)|September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaNHenryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nanoscale|March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etchingMarta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)|January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDsMateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Materials (Basel, Switzerland)|October 27, 2022
Negative Magnetoresistivity in Highly Doped n-Type GaNLeszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, et al.
ACS Applied Electronic Materials|June 16, 2025
Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDsMikołaj Chlipała, Konstantinos Akritidis, Iryna Levchenko, et al.
Nature Communications|November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating currentMikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
Pageof 2

Showing results (1-10 of 15) with videos related to

Sort By:
Pageof 2
ACS Applied Materials & Interfaces|April 26, 2024
Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDsMikołaj Chlipała, Henryk Turski
Nanomaterials (Basel, Switzerland)|January 24, 2025
Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and PolaritiesArtem Bercha, Mikołaj Chlipała, Mateusz Hajdel, et al.
Optics Express|October 29, 2020
Nitride light-emitting diodes for cryogenic temperaturesMikolaj Chlipala, Henryk Turski, Marcin Siekacz, et al.
Optics Express|March 4, 2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodesShyam Bharadwaj, Jeffrey Miller, Kevin Lee, et al.
Materials (Basel, Switzerland)|September 9, 2022
Role of Metallic Adlayer in Limiting Ge Incorporation into GaNHenryk Turski, Pawel Wolny, Mikolaj Chlipala, et al.
Nanoscale|March 5, 2020
Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etchingMarta Sawicka, Natalia Fiuczek, Henryk Turski, et al.
Materials (Basel, Switzerland)|January 11, 2022
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDsMateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, et al.
Materials (Basel, Switzerland)|October 27, 2022
Negative Magnetoresistivity in Highly Doped n-Type GaNLeszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, et al.
ACS Applied Electronic Materials|June 16, 2025
Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDsMikołaj Chlipała, Konstantinos Akritidis, Iryna Levchenko, et al.
Nature Communications|November 21, 2023
Bidirectional light-emitting diode as a visible light source driven by alternating currentMikołaj Żak, Grzegorz Muziol, Marcin Siekacz, et al.
Pageof 2