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Scientific Reports|September 24, 2017
Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si SubstrateBinh Tinh Tran, Hideki HirayamaScientific Reports|October 17, 2022
Nonrelevant quantum levels effecting on the current in 2-well terahertz quantum cascade lasersLi Wang, Tsung-Tse Lin, Ke Wang, et al.Scientific Reports|December 23, 2022
Optical gain reduction caused by nonrelevant subbands in narrow-period terahertz quantum cascade laser designsLi Wang, Tsung-Tse Lin, Ke Wang, et al.Nanotechnology|February 10, 2021
Suppressing the efficiency droop in the AlGaN-based UVB LEDUsman Muhammad, Shahzeb Malik, Muhammad Ajmal Khan, et al.Nanotechnology|March 3, 2021
Suppressing the efficiency droop in AlGaN-based UVB LEDsMuhammad Usman, Shahzeb Malik, M Ajmal Khan, et al.Scientific Reports|December 9, 2021
Leakages suppression by isolating the desired quantum levels for high-temperature terahertz quantum cascade lasersLi Wang, Tsung-Tse Lin, Mingxi Chen, et al.Scientific Reports|February 27, 2023
Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxyAtsushi Tomita, Takumi Miyagawa, Hideki Hirayama, et al.Scientific Reports|February 10, 2023
High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxyKentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, et al.Scientific Reports|July 3, 2019
Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperaturesLi Wang, Tsung-Tse Lin, Ke Wang, et al.Scientific Reports|February 17, 2022
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectanceM Ajmal Khan, Noritoshi Maeda, Joosun Yun, et al.Pageof 2