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Scientific Reports|November 8, 2016
Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED ApplicationsBinh Tinh Tran, Noritoshi Maeda, Masafumi Jo, et al.Optics Letters|May 2, 2020
Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED: publisher's noteM Ajmal Khan, Ryohei Takeda, Yoichi Yamada, et al.Scientific Reports|October 7, 2015
Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si SubstrateBinh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, et al.Scientific Reports|May 10, 2022
Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxyKentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, et al.Nature Materials|March 4, 2003
Microassembly of semiconductor three-dimensional photonic crystalsKanna Aoki, Hideki T Miyazaki, Hideki Hirayama, et al.Nanotechnology|October 2, 2020
Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emittersM Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, et al.Scientific Reports|July 14, 2023
M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemesFan Ye, Yiyang Wang, Li Wang, et al.Science (New York, N.Y.)|March 19, 2026
Highly efficient, deep-ultraviolet luminescence in hBN moiré quantum wellsChengyun Hong, Fangzhou Zhao, Su-Beom Song, et al.Pageof 2