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Journal of Physics. Condensed Matter : an Institute of Physics Journal|August 27, 2025
Band offsets, charge transfers, and formation energies of oxygen vacancies in c-ZrO2/Si interfaceMuti Feng, Ruogu Zheng, Bo Xiang, et al.
ACS Applied Materials & Interfaces|October 6, 2021
Structure-Composition-Property Relationships in Antiperovskite Nitrides: Guiding a Rational Alloy DesignHongxia Zhong, Chunbao Feng, Hai Wang, et al.
Nanoscale|June 5, 2014
Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistorsZeyuan Ni, Hongxia Zhong, Xinhe Jiang, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|August 10, 2022
Pressure-Induced Indirect-Direct Bandgap Transition of CsPbBr3 Single Crystal and Its Effect on Photoluminescence Quantum YieldJunbo Gong, Hongxia Zhong, Chan Gao, et al.
National Science Review|July 7, 2022
Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayersKe Wu, Hongxia Zhong, Quanbing Guo, et al.
Journal of Colloid and Interface Science|January 4, 2026
H+-empowered potassium vanadate cathode: An electron/ion/interface trifecta for high-performance zinc-ion batteriesXuena Du, Xinyu Zhu, Ziyun Shang, et al.
Scientific Reports|March 2, 2016
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band CalculationsHongxia Zhong, Ruge Quhe, Yangyang Wang, et al.
Nanoscale|December 16, 2015
Does p-type ohmic contact exist in WSe2-metal interfaces?Yangyang Wang, Ruo Xi Yang, Ruge Quhe, et al.
Nanoscale|January 7, 2015
Graphdiyne-metal contacts and graphdiyne transistorsYuanyuan Pan, Yangyang Wang, Lu Wang, et al.
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