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Nanomaterials (Basel, Switzerland)|October 23, 2021
Review of Si-Based GeSn CVD Growth and Optoelectronic ApplicationsYuanhao Miao, Guilei Wang, Zhenzhen Kong, et al.
Optics Letters|May 15, 2024
High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrateHe Wang, Zhenzhen Kong, Xinguang Tan, et al.
Materials (Basel, Switzerland)|May 28, 2022
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual SubstrateBuqing Xu, Yong Du, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)|April 30, 2021
Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVDYong Du, Zhenzhen Kong, Muhammet S Toprak, et al.
Nanomaterials (Basel, Switzerland)|February 11, 2023
Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral RegionYuanhao Miao, Hongxiao Lin, Ben Li, et al.
Nanomaterials (Basel, Switzerland)|March 26, 2022
Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic ApplicationsZhenzhen Kong, Guilei Wang, Renrong Liang, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Strain Modulation of Selectively and/or Globally Grown Ge LayersYong Du, Guilei Wang, Yuanhao Miao, et al.
Micromachines|October 27, 2022
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge LaserYong Du, Wenqi Wei, Buqing Xu, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric AcidsYangyang Li, Huilong Zhu, Zhenzhen Kong, et al.
Nanomaterials (Basel, Switzerland)|August 14, 2020
State of the Art and Future Perspectives in Advanced CMOS TechnologyHenry H Radamson, Huilong Zhu, Zhenhua Wu, et al.
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