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ACS Applied Materials & Interfaces|November 21, 2023
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process ConditionsZhenzhen Kong, Yanpeng Song, Hailing Wang, et al.Nanomaterials (Basel, Switzerland)|July 29, 2023
Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor ProcessEnxu Liu, Junjie Li, Na Zhou, et al.Materials (Basel, Switzerland)|February 13, 2020
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nmJunjie Li, Yongliang Li, Na Zhou, et al.Nanomaterials (Basel, Switzerland)|April 25, 2020
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-TransistorsJunjie Li, Yongliang Li, Na Zhou, et al.Nanomaterials (Basel, Switzerland)|May 24, 2024
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and TechnologyHenry H Radamson, Yuanhao Miao, Ziwei Zhou, et al.Pageof 3