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Nanoscale
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June 9, 2017
High performance bi-layer atomic switching devices
Jae Hyeok Ju, Sung Kyu Jang, Hyeonje Son, et al.
Nanoscale
|
March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistor
Chanwoo Kang, Haeju Choi, Hyeonje Son, et al.
Nature Communications
|
October 14, 2022
A steep switching WSe<sub>2</sub> impact ionization field-effect transistor
Haeju Choi, Jinshu Li, Taeho Kang, et al.
ACS Applied Materials & Interfaces
|
February 15, 2021
Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices
Hyeonje Son, Haeju Choi, Jaeho Jeon, et al.
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of 1
Search research articles
Search
Showing results (1-10 of 4) with videos related to
Sort By:
Page
of 1
Nanoscale
|
June 9, 2017
High performance bi-layer atomic switching devices
Jae Hyeok Ju, Sung Kyu Jang, Hyeonje Son, et al.
Nanoscale
|
March 1, 2023
A steep-switching impact ionization-based threshold switching field-effect transistor
Chanwoo Kang, Haeju Choi, Hyeonje Son, et al.
Nature Communications
|
October 14, 2022
A steep switching WSe<sub>2</sub> impact ionization field-effect transistor
Haeju Choi, Jinshu Li, Taeho Kang, et al.
ACS Applied Materials & Interfaces
|
February 15, 2021
Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices
Hyeonje Son, Haeju Choi, Jaeho Jeon, et al.
Page
of 1