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June 26, 2026
Interface-Engineered, Low-Damage IGZO/HfO<sub>2</sub> Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process
Inkook Hwang, Hyeonwu Nam, Jiwon Kim, et al.
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Search research articles
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Showing results (1-10 of 1) with videos related to
Sort By:
Page
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Micromachines
|
June 26, 2026
Interface-Engineered, Low-Damage IGZO/HfO<sub>2</sub> Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD Process
Inkook Hwang, Hyeonwu Nam, Jiwon Kim, et al.
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of 1