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Nanomaterials (Basel, Switzerland)|July 27, 2022
Microstructural Control of Soluble Acene Crystals for Field-Effect Transistor Gas SensorsJung Hun Lee, Jeong Hwan Chun, Hyun-Jong Chung, et al.Nature|November 19, 2011
A role for graphene in silicon-based semiconductor devicesKinam Kim, Jae-Young Choi, Taek Kim, et al.Nanotechnology|August 27, 2009
The structural and electrical evolution of graphene by oxygen plasma-induced disorderDong Chul Kim, Dae-Young Jeon, Hyun-Jong Chung, et al.Nano Letters|November 22, 2013
Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronicsJinseong Heo, Kyung-Eun Byun, Jaeho Lee, et al.ACS Nano|March 17, 2011
Band gap opening by two-dimensional manifestation of peierls instability in grapheneSung-Hoon Lee, Hyun-Jong Chung, Jinseong Heo, et al.Nanotechnology|June 27, 2019
The evolution of surface cleanness and electronic properties of graphene field-effect transistors during mechanical cleaning with atomic force microscopyDo-Hyun Park, Young Jin Cho, Jun-Ho Lee, et al.Nanomaterials (Basel, Switzerland)|September 9, 2022
Simulation of Figures of Merit for Barristor Based on Graphene/Insulator JunctionJun-Ho Lee, Inchul Choi, Nae Bong Jeong, et al.Nanotechnology|September 3, 2021
Atomic layer deposited Al2O3passivation layer for few-layer WS2field effect transistorsYoung Gyu You, Dong Ho Shin, Jong Hwa Ryu, et al.ACS Applied Materials & Interfaces|November 12, 2020
Large Temperature-Independent Magnetoresistance without Gating Operation in Monolayer GrapheneJihoon Jeon, Duk Hyun Lee, Yeon Soo Kim, et al.Nanomaterials (Basel, Switzerland)|November 11, 2022
Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 BarristorsDong-Ho Shin, Young Gyu You, Sung Il Jo, et al.Pageof 3