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Hyunsang Hwang

Showing results (51-60 of 57) with videos related to

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Nanotechnology|August 5, 2009
An electrically modifiable synapse array of resistive switching memoryHyejung Choi, Heesoo Jung, Joonmyoung Lee, et al.
ACS Nano|August 30, 2012
High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arraysWootae Lee, Jubong Park, Seonghyun Kim, et al.
ACS Applied Materials & Interfaces|September 22, 2020
Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge TransferHokyeong Jeong, Jiye Kim, Dong Yeong Kim, et al.
Nanotechnology|May 17, 2011
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching deviceKyungah Seo, Insung Kim, Seungjae Jung, et al.
Nanotechnology|September 4, 2013
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing deviceSangsu Park, Jinwoo Noh, Myung-Lae Choo, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 22, 2021
Surface Diffusion and Epitaxial Self-Planarization for Wafer-Scale Single-Grain Metal Chalcogenide Thin FilmsAnupam Giri, Manish Kumar, Jaeseon Kim, et al.
ACS Applied Materials & Interfaces|July 24, 2018
Reliable Multivalued Conductance States in TaO <sub>x</sub> Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy AnalysisMyoung-Jae Lee, Gyeong-Su Park, David H Seo, et al.
Pageof 6

Showing results (51-60 of 57) with videos related to

Sort By:
Pageof 6
You have reached the last page of results.This site can display upto 57 results.
Nanotechnology|August 5, 2009
An electrically modifiable synapse array of resistive switching memoryHyejung Choi, Heesoo Jung, Joonmyoung Lee, et al.
ACS Nano|August 30, 2012
High current density and nonlinearity combination of selection device based on TaO(x)/TiO2/TaO(x) structure for one selector-one resistor arraysWootae Lee, Jubong Park, Seonghyun Kim, et al.
ACS Applied Materials & Interfaces|September 22, 2020
Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge TransferHokyeong Jeong, Jiye Kim, Dong Yeong Kim, et al.
Nanotechnology|May 17, 2011
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching deviceKyungah Seo, Insung Kim, Seungjae Jung, et al.
Nanotechnology|September 4, 2013
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing deviceSangsu Park, Jinwoo Noh, Myung-Lae Choo, et al.
Advanced Materials (Deerfield Beach, Fla.)|July 22, 2021
Surface Diffusion and Epitaxial Self-Planarization for Wafer-Scale Single-Grain Metal Chalcogenide Thin FilmsAnupam Giri, Manish Kumar, Jaeseon Kim, et al.
ACS Applied Materials & Interfaces|July 24, 2018
Reliable Multivalued Conductance States in TaO <sub>x</sub> Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy AnalysisMyoung-Jae Lee, Gyeong-Su Park, David H Seo, et al.
Pageof 6