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Ignasi Fina

Showing results (11-20 of 40) with videos related to

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ACS Applied Materials & Interfaces|May 26, 2025
Cooperative Effects of Interface Symmetry, Redox Conditions and Low-Thickness to Improve Polarization in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> FilmsXueliang Lyu, Faizan Ali, Tingfeng Song, et al.
ACS Applied Electronic Materials|July 31, 2025
Yttrium: A Highly Efficient Dopant for Ferroelectric HfO<sub>2</sub>Mehrdad Ghiasabadi Farahani, César Magén, Alberto Quintana, et al.
Nanoscale|February 22, 2023
Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films with improved endurance obtained through low temperature epitaxial growth on seed layersTingfeng Song, Romain Bachelet, Guillaume Saint-Girons, et al.
ACS Applied Electronic Materials|October 2, 2023
Robust Antiferromagnetic FeRh Films on MicaAlberto Quintana, Carlos Zarco, Nico Dix, et al.
ACS Applied Electronic Materials|January 19, 2026
Interface Engineering Using Multiple La-Doped HfO<sub>2</sub> Epitaxial Subnanolayers To Improve the Ferroelectric Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> FilmsMehrdad Ghiasabadi Farahani, Tingfeng Song, César Magén, et al.
ACS Applied Materials & Interfaces|June 19, 2018
Control of the Polarization of Ferroelectric Capacitors by the Concurrent Action of Light and AdsorbatesFanmao Liu, Ignasi Fina, Guillaume Sauthier, et al.
ACS Applied Electronic Materials|November 29, 2021
Impact of La Concentration on Ferroelectricity of La-Doped HfO<sub>2</sub> Epitaxial Thin FilmsTingfeng Song, Huan Tan, Romain Bachelet, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 12, 2018
Disclosing odd symmetry, strain driven magnetic response of Co on Pt/PMN-PT (0 1 1)Michael Foerster, Ignasi Fina, Simone Finizio, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 25, 2014
Spintronic functionality of BiFeO3 domain wallsJi Hye Lee, Ignasi Fina, Xavi Marti, et al.
Scientific Reports|September 26, 2015
In-plane tunnelling field-effect transistor integrated on SiliconIgnasi Fina, Geanina Apachitei, Daniele Preziosi, et al.
Pageof 4

Showing results (11-20 of 40) with videos related to

Sort By:
Pageof 4
ACS Applied Materials & Interfaces|May 26, 2025
Cooperative Effects of Interface Symmetry, Redox Conditions and Low-Thickness to Improve Polarization in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> FilmsXueliang Lyu, Faizan Ali, Tingfeng Song, et al.
ACS Applied Electronic Materials|July 31, 2025
Yttrium: A Highly Efficient Dopant for Ferroelectric HfO<sub>2</sub>Mehrdad Ghiasabadi Farahani, César Magén, Alberto Quintana, et al.
Nanoscale|February 22, 2023
Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films with improved endurance obtained through low temperature epitaxial growth on seed layersTingfeng Song, Romain Bachelet, Guillaume Saint-Girons, et al.
ACS Applied Electronic Materials|October 2, 2023
Robust Antiferromagnetic FeRh Films on MicaAlberto Quintana, Carlos Zarco, Nico Dix, et al.
ACS Applied Electronic Materials|January 19, 2026
Interface Engineering Using Multiple La-Doped HfO<sub>2</sub> Epitaxial Subnanolayers To Improve the Ferroelectric Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> FilmsMehrdad Ghiasabadi Farahani, Tingfeng Song, César Magén, et al.
ACS Applied Materials & Interfaces|June 19, 2018
Control of the Polarization of Ferroelectric Capacitors by the Concurrent Action of Light and AdsorbatesFanmao Liu, Ignasi Fina, Guillaume Sauthier, et al.
ACS Applied Electronic Materials|November 29, 2021
Impact of La Concentration on Ferroelectricity of La-Doped HfO<sub>2</sub> Epitaxial Thin FilmsTingfeng Song, Huan Tan, Romain Bachelet, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 12, 2018
Disclosing odd symmetry, strain driven magnetic response of Co on Pt/PMN-PT (0 1 1)Michael Foerster, Ignasi Fina, Simone Finizio, et al.
Advanced Materials (Deerfield Beach, Fla.)|September 25, 2014
Spintronic functionality of BiFeO3 domain wallsJi Hye Lee, Ignasi Fina, Xavi Marti, et al.
Scientific Reports|September 26, 2015
In-plane tunnelling field-effect transistor integrated on SiliconIgnasi Fina, Geanina Apachitei, Daniele Preziosi, et al.
Pageof 4