In-plane tunnelling field-effect transistor integrated on Silicon.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Microelectronics Engineering

Background:

• Silicon is the dominant microelectronics substrate, now integrating ferroelectric and ferromagnetic properties for non-volatility and giant magnetoresistance.
• Magnetoelectric effects, coupling ferroelectric and ferromagnetic orders, have been shown in nearly-perfect heterostructures.

Purpose of the Study:

• To achieve magnetoelectric functionality in silicon-integrated devices without requiring structurally perfect epilayers.
• To identify novel mechanisms for magnetoelectric coupling and electroresistance in silicon.

Main Methods:

• Fabrication of silicon-integrated devices incorporating ferroelectric and ferromagnetic functionalities.
• Investigation of magnetoelectric coupling mechanisms.
• Characterization of an in-plane tunneling mechanism responding to electric fields.

Main Results:

• Successful demonstration of magnetoelectric functionality in silicon devices, circumventing stringent epilayer requirements.
• Identification of an in-plane tunneling mechanism responsible for electroresistance.
• Distinction of this effect from conventional resistive-switching and tunnel electroresistance.

Conclusions:

• Magnetoelectric coupling and functionality can be achieved in silicon without structural perfection.
• A novel in-plane tunneling electroresistance effect has been discovered in silicon-integrated devices.
• This work opens new avenues for silicon-based spintronic and memory devices.