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Nanomaterials (Basel, Switzerland)|November 10, 2023
Influence of Different Carrier Gases, Temperature, and Partial Pressure on Growth Dynamics of Ge and Si NanowiresNicolas Forrer, Arianna Nigro, Gerard Gadea, et al.
Nano Letters|October 14, 2024
A Backgate for Enhanced Tunability of Holes in Planar GermaniumLuigi Ruggiero, Arianna Nigro, Ilaria Zardo, et al.
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces|October 14, 2022
Phonon Transport in GaAs and InAs Twinning SuperlatticesKim López-Güell, Nicolas Forrer, Xavier Cartoixà, et al.
ACS Nano|January 4, 2013
Crystal phase induced bandgap modifications in AlAs nanowires probed by resonant Raman spectroscopyStefan Funk, Ang Li, Daniele Ercolani, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|May 2, 2015
Pressure dependence of Raman spectrum in InAs nanowiresSara Yazji, Ilaria Zardo, Simon Hertenberger, et al.
ACS Applied Electronic Materials|October 20, 2025
Impact of Surface Treatments on the Transport Properties of Germanium 2DHGsNikunj Sangwan, Eric Jutzi, Christian Olsen, et al.
ACS Nano|March 27, 2012
Pressure tuning of the optical properties of GaAs nanowiresIlaria Zardo, Sara Yazji, Carlo Marini, et al.
Nanoscale|July 29, 2022
GaAs/GaP superlattice nanowires: growth, vibrational and optical propertiesOmer Arif, Valentina Zannier, Francesca Rossi, et al.
Nano Letters|May 25, 2013
E(1)(A) electronic band gap in wurtzite InAs nanowires studied by resonant Raman scatteringIlaria Zardo, Sara Yazji, Nicolas Hörmann, et al.
Nanoscale Horizons|May 20, 2024
TEM-compatible microdevice for the complete thermoelectric characterization of epitaxially integrated Si-based nanowiresJose M Sojo-Gordillo, Yashpreet Kaur, Saeko Tachikawa, et al.
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