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Ilia Valov

Showing results (31-40 of 61) with videos related to

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Physical Chemistry Chemical Physics : PCCP|April 28, 2026
Spectroscopic investigation of the structural and electronic properties of oxygen-deficient tantalum oxide thin filmsByoung Gun Han, Alexander Schönhals, Michael Lübben, et al.
Physical Chemistry Chemical Physics : PCCP|November 17, 2010
An EMF cell with a nitrogen solid electrolyte--on the transference of nitrogen ions in yttria-stabilized zirconiaDoh-Kwon Lee, Claus C Fischer, Ilia Valov, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2018
Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte NanodotsAlpana Nayak, Satomi Unayama, Seishiro Tai, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 7, 2017
Electrochemical Tantalum Oxide for Resistive Switching MemoriesAndrea Zaffora, Deok-Yong Cho, Kug-Seung Lee, et al.
Physical Chemistry Chemical Physics : PCCP|April 17, 2009
Defect chemistry of the cage compound, Ca(12)Al(14)O(33-delta)-understanding the route from a solid electrolyte to a semiconductor and electrideDoh-Kwon Lee, Lutz Kogel, Stefan G Ebbinghaus, et al.
Nature Materials|May 1, 2012
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfacesIlia Valov, Ina Sapezanskaia, Alpana Nayak, et al.
Nature Communications|June 24, 2014
Electrochemical dynamics of nanoscale metallic inclusions in dielectricsYuchao Yang, Peng Gao, Linze Li, et al.
ACS Applied Materials & Interfaces|March 8, 2017
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change MemoryUmberto Celano, Jonathan Op de Beeck, Sergiu Clima, et al.
Physical Chemistry Chemical Physics : PCCP|May 5, 2023
Resistive switching and role of interfaces in memristive devices based on amorphous NbO<sub></sub> grown by anodic oxidationGiuseppe Leonetti, Matteo Fretto, Katarzyna Bejtka, et al.
Physical Chemistry Chemical Physics : PCCP|July 24, 2014
Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cellsJan van den Hurk, Ann-Christin Dippel, Deok-Yong Cho, et al.
Pageof 7

Showing results (31-40 of 61) with videos related to

Sort By:
Pageof 7
Physical Chemistry Chemical Physics : PCCP|April 28, 2026
Spectroscopic investigation of the structural and electronic properties of oxygen-deficient tantalum oxide thin filmsByoung Gun Han, Alexander Schönhals, Michael Lübben, et al.
Physical Chemistry Chemical Physics : PCCP|November 17, 2010
An EMF cell with a nitrogen solid electrolyte--on the transference of nitrogen ions in yttria-stabilized zirconiaDoh-Kwon Lee, Claus C Fischer, Ilia Valov, et al.
Advanced Materials (Deerfield Beach, Fla.)|January 10, 2018
Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte NanodotsAlpana Nayak, Satomi Unayama, Seishiro Tai, et al.
Advanced Materials (Deerfield Beach, Fla.)|October 7, 2017
Electrochemical Tantalum Oxide for Resistive Switching MemoriesAndrea Zaffora, Deok-Yong Cho, Kug-Seung Lee, et al.
Physical Chemistry Chemical Physics : PCCP|April 17, 2009
Defect chemistry of the cage compound, Ca(12)Al(14)O(33-delta)-understanding the route from a solid electrolyte to a semiconductor and electrideDoh-Kwon Lee, Lutz Kogel, Stefan G Ebbinghaus, et al.
Nature Materials|May 1, 2012
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfacesIlia Valov, Ina Sapezanskaia, Alpana Nayak, et al.
Nature Communications|June 24, 2014
Electrochemical dynamics of nanoscale metallic inclusions in dielectricsYuchao Yang, Peng Gao, Linze Li, et al.
ACS Applied Materials & Interfaces|March 8, 2017
Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change MemoryUmberto Celano, Jonathan Op de Beeck, Sergiu Clima, et al.
Physical Chemistry Chemical Physics : PCCP|May 5, 2023
Resistive switching and role of interfaces in memristive devices based on amorphous NbO<sub></sub> grown by anodic oxidationGiuseppe Leonetti, Matteo Fretto, Katarzyna Bejtka, et al.
Physical Chemistry Chemical Physics : PCCP|July 24, 2014
Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cellsJan van den Hurk, Ann-Christin Dippel, Deok-Yong Cho, et al.
Pageof 7