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Journal of Nanoscience and Nanotechnology|March 14, 2021
Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon NanotubeSang Ho Lee, Min Su Cho, Hye Jin Mun, et al.Journal of Nanoscience and Nanotechnology|March 14, 2021
The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access MemoryHee Dae An, Min Su Cho, Hye Jin Mun, et al.Journal of Nanoscience and Nanotechnology|March 14, 2021
Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power DeviceMin Su Cho, Hye Jin Mun, Sang Ho Lee, et al.Journal of Nanoscience and Nanotechnology|March 15, 2021
Numerical Design of Carrier Transporting Layer in Top-Gate InGaZnO Thin-Film Transistors for Controlling Potential EnergyDo-Kyung Kim, Jihwan Park, Premkumar Vincent, et al.Biomacromolecules|July 5, 2023
One-Stop Strategy for Obtaining Controllable Sensitivity and Feasible Self-Patterning in Silver Nanowires/Elastomer Nanocomposite-Based Stretchable Ultrathin Strain SensorsJinuk Lee, Jun-Ik Park, Sin-Hyung Lee, et al.Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 15, 2023
Organic Memristor-Based Flexible Neural Networks with Bio-Realistic Synaptic Plasticity for Complex Combinatorial OptimizationHyeongwook Kim, Miseong Kim, Aejin Lee, et al.Journal of Nanoscience and Nanotechnology|May 12, 2015
A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysisJae Hwa Hwa, Young Jun Yoon, Hwan Gi Lee, et al.Journal of Nanoscience and Nanotechnology|July 2, 2020
Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain BoundaryHye Jin Mun, Min Su Cho, Jun Hyeok Jung, et al.Journal of Nanoscience and Nanotechnology|March 14, 2021
Design of a Capacitorless Dynamic Random Access Memory Based on Ultra-Thin Polycrystalline Silicon Junctionless Field-Effect Transistor with Dual-GateSang Ho Lee, Min Su Cho, Jun Hyeok Jung, et al.Journal of Nanoscience and Nanotechnology|July 2, 2020
Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with the Strained-Silicon Layer for Improving the Switching PerformancesSang Ho Lee, Min Su Cho, Jun Hyeok Jung, et al.Pageof 6