Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

J C Harmand

Showing results (1-10 of 21) with videos related to

Pageof 3
Sort By:
Nano Letters|March 9, 2010
Crystal phase quantum dotsN Akopian, G Patriarche, L Liu, et al.
Nanotechnology|July 6, 2011
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyM Tchernycheva, J C Harmand, G Patriarche, et al.
Nanotechnology|April 22, 2011
Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxyE Galopin, L Largeau, G Patriarche, et al.
Nanotechnology|August 10, 2011
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)L Largeau, D L Dheeraj, M Tchernycheva, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|April 12, 2006
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxyV G Dubrovskii, N V Sibirev, G E Cirlin, et al.
Nano Letters|February 25, 2011
New mode of vapor-liquid-solid nanowire growthV G Dubrovskii, G E Cirlin, N V Sibirev, et al.
Optics Letters|January 12, 2008
Second-harmonic generation in a doubly resonant semiconductor microcavityC Simonneau, J P Debray, J C Harmand, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|June 4, 2008
Shape modification of III-V nanowires: the role of nucleation on sidewallsV G Dubrovskii, N V Sibirev, G E Cirlin, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 26, 2011
Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wellsS A Lourenço, M A T da Silva, I F L Dias, et al.
Nanotechnology|February 20, 2016
Self-induced growth of vertical GaN nanowires on silicaV Kumaresan, L Largeau, F Oehler, et al.
Pageof 3

Showing results (1-10 of 21) with videos related to

Sort By:
Pageof 3
Nano Letters|March 9, 2010
Crystal phase quantum dotsN Akopian, G Patriarche, L Liu, et al.
Nanotechnology|July 6, 2011
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxyM Tchernycheva, J C Harmand, G Patriarche, et al.
Nanotechnology|April 22, 2011
Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxyE Galopin, L Largeau, G Patriarche, et al.
Nanotechnology|August 10, 2011
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)L Largeau, D L Dheeraj, M Tchernycheva, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|April 12, 2006
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxyV G Dubrovskii, N V Sibirev, G E Cirlin, et al.
Nano Letters|February 25, 2011
New mode of vapor-liquid-solid nanowire growthV G Dubrovskii, G E Cirlin, N V Sibirev, et al.
Optics Letters|January 12, 2008
Second-harmonic generation in a doubly resonant semiconductor microcavityC Simonneau, J P Debray, J C Harmand, et al.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics|June 4, 2008
Shape modification of III-V nanowires: the role of nucleation on sidewallsV G Dubrovskii, N V Sibirev, G E Cirlin, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 26, 2011
Effects of temperature on transition energies of GaAsSbN/GaAs single quantum wellsS A Lourenço, M A T da Silva, I F L Dias, et al.
Nanotechnology|February 20, 2016
Self-induced growth of vertical GaN nanowires on silicaV Kumaresan, L Largeau, F Oehler, et al.
Pageof 3