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J G Gluschke

Showing results (1-10 of 9) with videos related to

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The Review of Scientific Instruments|September 2, 2019
A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applicationsJ G Gluschke, F Richter, A P Micolich
Nanotechnology|September 3, 2014
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studiesJ G Gluschke, S Fahlvik Svensson, C Thelander, et al.
Nanotechnology|March 4, 2017
Towards low-dimensional hole systems in Be-doped GaAs nanowiresA R Ullah, J G Gluschke, P Krogstrup, et al.
Nano Letters|August 23, 2018
p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit GatingA R Ullah, F Meyer, J G Gluschke, et al.
Nano Letters|June 21, 2018
Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect TransistorsJ G Gluschke, J Seidl, R W Lyttleton, et al.
Nano Letters|June 27, 2019
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area EpitaxyJ Seidl, J G Gluschke, X Yuan, et al.
Nano Letters|April 17, 2015
InAs Nanowire Transistors with Multiple, Independent Wrap-Gate SegmentsA M Burke, D J Carrad, J G Gluschke, et al.
Nanotechnology|December 8, 2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistorsJ G Gluschke, J Seidl, A M Burke, et al.
Materials Horizons|November 25, 2021
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned NafionJ G Gluschke, J Seidl, R W Lyttleton, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
The Review of Scientific Instruments|September 2, 2019
A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applicationsJ G Gluschke, F Richter, A P Micolich
Nanotechnology|September 3, 2014
Fully tunable, non-invasive thermal biasing of gated nanostructures suitable for low-temperature studiesJ G Gluschke, S Fahlvik Svensson, C Thelander, et al.
Nanotechnology|March 4, 2017
Towards low-dimensional hole systems in Be-doped GaAs nanowiresA R Ullah, J G Gluschke, P Krogstrup, et al.
Nano Letters|August 23, 2018
p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit GatingA R Ullah, F Meyer, J G Gluschke, et al.
Nano Letters|June 21, 2018
Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect TransistorsJ G Gluschke, J Seidl, R W Lyttleton, et al.
Nano Letters|June 27, 2019
Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area EpitaxyJ Seidl, J G Gluschke, X Yuan, et al.
Nano Letters|April 17, 2015
InAs Nanowire Transistors with Multiple, Independent Wrap-Gate SegmentsA M Burke, D J Carrad, J G Gluschke, et al.
Nanotechnology|December 8, 2018
Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistorsJ G Gluschke, J Seidl, A M Burke, et al.
Materials Horizons|November 25, 2021
Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned NafionJ G Gluschke, J Seidl, R W Lyttleton, et al.
Pageof 1