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The Review of Scientific Instruments|January 12, 2010
Simple and efficient scanning tunneling luminescence detection at low-temperatureJ G Keizer, J K Garleff, P M KoenraadPhysical Review Letters|September 4, 2008
Controlled charge switching on a single donor with a scanning tunneling microscopeK Teichmann, M Wenderoth, S Loth, et al.Nano Letters|August 17, 2011
Bistable charge configuration of donor systems near the GaAs(110) surfacesK Teichmann, M Wenderoth, S Loth, et al.Nano Letters|November 3, 2010
Nanoscale potential fluctuations in (GaMn)As/GaAs heterostructures: from individual ions to charge clusters and electrostatic quantum dotsA P Wijnheijmer, O Makarovsky, J K Garleff, et al.Physical Review Letters|June 13, 2009
Enhanced donor binding energy close to a semiconductor surfaceA P Wijnheijmer, J K Garleff, K Teichmann, et al.Nanotechnology|December 24, 2010
Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedureW Lu, M Bozkurt, J G Keizer, et al.Physical Review Letters|April 7, 2010
Surface induced asymmetry of acceptor wave functionsC Celebi, J K Garleff, A Yu Silov, et al.Nanotechnology|May 1, 2010
An atomically resolved study of InGaAs quantum dot layers grown with an indium flush stepJ G Keizer, E C Clark, M Bichler, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|March 19, 2015
Bistable Si dopants in the GaAs (1 1 0) surfaceE P Smakman, P M KoenraadPhysical Review Letters|May 27, 2014
Spin-orbit-induced circulating currents in a semiconductor nanostructureJ van Bree, A Yu Silov, P M Koenraad, et al.Pageof 4