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Jan Gutwirth

Showing results (1-10 of 10) with videos related to

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Nanomaterials (Basel, Switzerland)|June 10, 2022
Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin FilmsJan Gutwirth, Magdaléna Kotrla, Tomáš Halenkovič, et al.
Journal of the American Society for Mass Spectrometry|September 4, 2020
Laser Ablation Generation of Bismuth Selenide Clusters from Mixtures of Elements, Crystalline Bi<sub>2</sub>Se<sub>3</sub>, or Thin Films: Laser Desorption Ionization (LDI) and Surface Assisted LDI Time-of-Flight Mass Spectrometry using Graphene and NanodiamondsGovinda Mandal, Ravi Madhukar Mawale, Jan Gutwirth, et al.
Optics Letters|February 29, 2020
GaTe-Sb<sub>2</sub>Te<sub>3</sub> thin-films phase change characteristicsMarek Bouška, Virginie Nazabal, Jan Gutwirth, et al.
Optics Letters|March 13, 2020
Linear and nonlinear optical properties of co-sputtered Ge-Sb-Se amorphous thin filmsTomáš Halenkovič, Jan Gutwirth, Tintu Kuriakose, et al.
Scientific Reports|December 18, 2019
Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric StudyRavi Mawale, Govinda Mandal, Marek Bouška, et al.
Scientific Reports|January 3, 2025
Sc-doped GeTe thin films prepared by radio-frequency magnetron sputteringMarek Bouška, Jan Gutwirth, Kamil Bečvář, et al.
Scientific Reports|July 17, 2019
Mass spectrometric investigation of amorphous Ga-Sb-Se thin filmsRavi Mawale, Tomáš Halenkovič, Marek Bouška, et al.
ACS Applied Materials & Interfaces|January 23, 2024
Praseodymium-Doped Ge<sub>20</sub>In<sub>5</sub>Sb<sub>10</sub>Se<sub>65</sub> Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic CircuitsFlorent Starecki, Marion Baillieul, Taghrid Ghanawi, et al.
Scientific Reports|May 16, 2020
Comparative study of Er<sup>3+</sup>-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser depositionSimone Normani, Geoffrey Louvet, Emeline Baudet, et al.
Optics Express|August 6, 2020
Co-sputtered Pr<sup>3+</sup>-doped Ga-Ge-Sb-Se active waveguides for mid-infrared operationGeoffrey Louvet, Simone Normani, Loïc Bodiou, et al.
Pageof 1

Showing results (1-10 of 10) with videos related to

Sort By:
Pageof 1
Nanomaterials (Basel, Switzerland)|June 10, 2022
Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin FilmsJan Gutwirth, Magdaléna Kotrla, Tomáš Halenkovič, et al.
Journal of the American Society for Mass Spectrometry|September 4, 2020
Laser Ablation Generation of Bismuth Selenide Clusters from Mixtures of Elements, Crystalline Bi<sub>2</sub>Se<sub>3</sub>, or Thin Films: Laser Desorption Ionization (LDI) and Surface Assisted LDI Time-of-Flight Mass Spectrometry using Graphene and NanodiamondsGovinda Mandal, Ravi Madhukar Mawale, Jan Gutwirth, et al.
Optics Letters|February 29, 2020
GaTe-Sb<sub>2</sub>Te<sub>3</sub> thin-films phase change characteristicsMarek Bouška, Virginie Nazabal, Jan Gutwirth, et al.
Optics Letters|March 13, 2020
Linear and nonlinear optical properties of co-sputtered Ge-Sb-Se amorphous thin filmsTomáš Halenkovič, Jan Gutwirth, Tintu Kuriakose, et al.
Scientific Reports|December 18, 2019
Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric StudyRavi Mawale, Govinda Mandal, Marek Bouška, et al.
Scientific Reports|January 3, 2025
Sc-doped GeTe thin films prepared by radio-frequency magnetron sputteringMarek Bouška, Jan Gutwirth, Kamil Bečvář, et al.
Scientific Reports|July 17, 2019
Mass spectrometric investigation of amorphous Ga-Sb-Se thin filmsRavi Mawale, Tomáš Halenkovič, Marek Bouška, et al.
ACS Applied Materials & Interfaces|January 23, 2024
Praseodymium-Doped Ge<sub>20</sub>In<sub>5</sub>Sb<sub>10</sub>Se<sub>65</sub> Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic CircuitsFlorent Starecki, Marion Baillieul, Taghrid Ghanawi, et al.
Scientific Reports|May 16, 2020
Comparative study of Er<sup>3+</sup>-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser depositionSimone Normani, Geoffrey Louvet, Emeline Baudet, et al.
Optics Express|August 6, 2020
Co-sputtered Pr<sup>3+</sup>-doped Ga-Ge-Sb-Se active waveguides for mid-infrared operationGeoffrey Louvet, Simone Normani, Loïc Bodiou, et al.
Pageof 1