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ACS Applied Materials & Interfaces|October 3, 2019
Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar CellsAh-Jin Cho, Jang-Yeon Kwon
Nanoscale Research Letters|April 9, 2015
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistorsAh-Jin Cho, Kee Chan Park, Jang-Yeon Kwon
RSC Advances|May 11, 2022
Thermo and flex multi-functional array ionic sensor for a human adaptive deviceSukjin Jang, Daehwan Choi, Suk Yang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 24, 2017
Grains in Selectively Grown MoS2 Thin FilmsHyung-Jun Kim, Hojoong Kim, Suk Yang, et al.
ACS Omega|January 20, 2025
ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAMJeong-Min Park, Sein Lee, Junseo Lee, et al.
ACS Applied Materials & Interfaces|October 3, 2018
Two-Dimensional WSe2/MoS2 p-n Heterojunction-Based Transparent Photovoltaic Cell and Its Performance Enhancement by Fluoropolymer PassivationAh-Jin Cho, Min-Kyu Song, Dong-Won Kang, et al.
ACS Applied Materials & Interfaces|June 9, 2017
Honeycomb-Like Interconnected Network of Nickel Phosphide Heteronanoparticles with Superior Electrochemical Performance for SupercapacitorsShude Liu, Kalimuthu Vijaya Sankar, Aniruddha Kundu, et al.
Nanoscale Research Letters|April 9, 2015
Influence of post-annealing on the off current of MoS2 field-effect transistorsSeok Daniel Namgung, Suk Yang, Kyung Park, et al.
RSC Advances|May 13, 2022
Effects of proton conduction on dielectric properties of peptidesTaehoon Sung, Seok Daniel Namgung, Jaehun Lee, et al.
Scientific Reports|September 16, 2017
Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film TransistorHyun-Woo Park, Aeran Song, Dukhyun Choi, et al.
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