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Janguk Han

Showing results (21-30 of 26) with videos related to

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Nanoscale Advances|May 31, 2024
Implementation of Bayesian networks and Bayesian inference using a Cu<sub>0.1</sub>Te<sub>0.9</sub>/HfO<sub>2</sub>/Pt threshold switching memristorIn Kyung Baek, Soo Hyung Lee, Yoon Ho Jang, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 28, 2024
In-Materia Annealing and Combinatorial Optimization Based on Vertical Memristive ArraySoo Hyung Lee, Sunwoo Cheong, Jea Min Cho, et al.
Materials Horizons|November 12, 2025
High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm <i>via</i> stepwise cycling in Y-doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin filmsJonghoon Shin, Haengha Seo, Janguk Han, et al.
Nanoscale Horizons|October 8, 2024
A stochastic photo-responsive memristive neuron for an in-sensor visual system based on a restricted Boltzmann machineJin Hong Kim, Hyun Wook Kim, Min Jung Chung, et al.
Small (Weinheim an Der Bergstrasse, Germany)|January 11, 2024
2Memristor-1Capacitor Integrated Temporal Kernel for High-Dimensional Data MappingSung Keun Shim, Yoon Ho Jang, Janguk Han, et al.
ACS Applied Materials & Interfaces|March 16, 2024
Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge<sub>0.6</sub>Se<sub>0.4</sub> Film for High-Density Artificial Neural NetworksJeong Woo Jeon, Byongwoo Park, Yoon Ho Jang, et al.
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Showing results (21-30 of 26) with videos related to

Sort By:
Pageof 3
You have reached the last page of results.This site can display upto 26 results.
Nanoscale Advances|May 31, 2024
Implementation of Bayesian networks and Bayesian inference using a Cu<sub>0.1</sub>Te<sub>0.9</sub>/HfO<sub>2</sub>/Pt threshold switching memristorIn Kyung Baek, Soo Hyung Lee, Yoon Ho Jang, et al.
Advanced Materials (Deerfield Beach, Fla.)|August 28, 2024
In-Materia Annealing and Combinatorial Optimization Based on Vertical Memristive ArraySoo Hyung Lee, Sunwoo Cheong, Jea Min Cho, et al.
Materials Horizons|November 12, 2025
High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm <i>via</i> stepwise cycling in Y-doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin filmsJonghoon Shin, Haengha Seo, Janguk Han, et al.
Nanoscale Horizons|October 8, 2024
A stochastic photo-responsive memristive neuron for an in-sensor visual system based on a restricted Boltzmann machineJin Hong Kim, Hyun Wook Kim, Min Jung Chung, et al.
Small (Weinheim an Der Bergstrasse, Germany)|January 11, 2024
2Memristor-1Capacitor Integrated Temporal Kernel for High-Dimensional Data MappingSung Keun Shim, Yoon Ho Jang, Janguk Han, et al.
ACS Applied Materials & Interfaces|March 16, 2024
Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge<sub>0.6</sub>Se<sub>0.4</sub> Film for High-Density Artificial Neural NetworksJeong Woo Jeon, Byongwoo Park, Yoon Ho Jang, et al.
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