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Jason Tolentino

Showing results (1-10 of 5) with videos related to

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The Journal of Chemical Physics|July 28, 2023
Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistorsJason Tolentino, Markelle Gibbs, Alex Abelson, et al.
ACS Nano|September 6, 2011
The photothermal stability of PbS quantum dot solidsRachelle Ihly, Jason Tolentino, Yao Liu, et al.
Nano Letters|June 28, 2013
Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistorsTyler Otto, Chris Miller, Jason Tolentino, et al.
Nano Letters|October 26, 2011
Robust, functional nanocrystal solids by infilling with atomic layer depositionYao Liu, Markelle Gibbs, Craig L Perkins, et al.
Nano Letters|March 5, 2013
PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1)Yao Liu, Jason Tolentino, Markelle Gibbs, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
The Journal of Chemical Physics|July 28, 2023
Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistorsJason Tolentino, Markelle Gibbs, Alex Abelson, et al.
ACS Nano|September 6, 2011
The photothermal stability of PbS quantum dot solidsRachelle Ihly, Jason Tolentino, Yao Liu, et al.
Nano Letters|June 28, 2013
Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistorsTyler Otto, Chris Miller, Jason Tolentino, et al.
Nano Letters|October 26, 2011
Robust, functional nanocrystal solids by infilling with atomic layer depositionYao Liu, Markelle Gibbs, Craig L Perkins, et al.
Nano Letters|March 5, 2013
PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1)Yao Liu, Jason Tolentino, Markelle Gibbs, et al.
Pageof 1