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ACS Applied Materials & Interfaces|March 18, 2026
Threshold Switching Behavior and Underlying Mechanisms in Pure SiO2-Based SelectorsHye Rim Kim, Tae Jung Ha, Jeong Hwan Song, et al.
ACS Applied Materials & Interfaces|February 4, 2014
Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodesKatsuhisa Murakami, Mathias Rommel, Boris Hudec, et al.
ACS Applied Materials & Interfaces|December 19, 2019
Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible ElectronicsJung Joon Pyeon, In-Hwan Baek, Woo Chul Lee, et al.
Nanoscale|September 14, 2018
Low-temperature wafer-scale synthesis of two-dimensional SnSJung Joon Pyeon, In-Hwan Baek, Weon Cheol Lim, et al.
Small (Weinheim an Der Bergstrasse, Germany)|September 1, 2017
Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching DeviceGun Hwan Kim, Hyunsu Ju, Min Kyu Yang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|November 17, 2025
Purification of Tin Iodide through Solid-State Reaction for Efficient Tin-Lead Mixed Perovskite Solar CellsMun Young Woo, Jeong Min Im, Sunwoo Kim, et al.
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