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Updated: Feb 23, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Four-Bits-Per-Cell Operation in an HfO2 -Based Resistive Switching Device

Gun Hwan Kim1, Hyunsu Ju2, Min Kyu Yang3

  • 1Center for Thin-Film Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro, Yuseong-Gu, Daejeon, 34114, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|September 1, 2017
PubMed

Keywords:
HfO2error checking/correction (ECC) algorithmincremental step pulse programming (ISPP)quadruple-level cell (QLC)resistive switching (RS) memory

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